BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Soft recovery characteristic
Low reverse current
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Mechanical Data
Case:
SOD-57 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 369 mg
Parts Table
Part
BYV12
BYV13
BYV14
BYV15
BYV16
Type differentiation
V
R
= 100 V; I
FAV
= 1.5 A
V
R
= 400 V; I
FAV
= 1.5 A
V
R
= 600 V; I
FAV
= 1.5 A
V
R
= 800 V; I
FAV
= 1.5 A
V
R
= 1000 V; I
FAV
= 1.5 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYV12
BYV13
BYV14
BYV15
BYV16
Peak forward surge current
Repetitive peak forward current
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
Value
100
400
600
800
1000
40
9
Unit
V
V
V
V
V
A
A
Document Number 86039
Rev. 1.6, 13-Apr-05
www.vishay.com
1
BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
Parameter
Average forward current
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
I
(BR)R
= 0.4 A
Test condition
ϕ
= 180 °, T
amb
= 25 °C
Part
Symbol
I
FAV
T
j
= T
stg
E
R
Value
1.5
- 55 to + 175
10
Unit
A
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing
25 mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery charge
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, di/dt = 5 A/µs
Test condition
Symbol
V
F
I
R
I
R
t
rr
Q
rr
1
60
Min
Typ.
Max
1.5
5
150
300
200
Unit
V
µA
µA
ns
nC
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
Therm. Resist. Junction/Ambient (K/W)
120
l
100
80
60
40
20
0
0
5
10
15
20
25
30
l - Lead Length ( mm )
T
L
= constant
l
T
j
- Junction Temperature (
°
C )
240
R
thJA
= 100 K/W
200
V
RRM
160
BYV12
120
BYV14
80
BYV13
40
0
94 9517
V
R
BYV16
BYV15
94 9101
1000
0
200
400
600
800
V
R
,V
RRM
- Reverse / Repetitive Peak Reverse
Voltage ( V )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
www.vishay.com
2
Document Number 86039
Rev. 1.6, 13-Apr-05
BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
P - Reverse Power Dissipation ( mW )
R
10
– Forward Current ( A )
450
400
350
300
250
200
150
100
50
0
25
50
75
100
P
R
-Limit
@80 % V
R
V
R
= V
RRM
1
T
j
= 175° C
0.1
T
j
= 25° C
0.01
P
R
-Limit
@100 % V
R
I
F
0.001
0
16375
0.5
1.0
1.5
2.0
2.5
3.0
16378
125
150
175
V
F
– Forward Voltage ( V )
T - Junction Temperature (
°C
)
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Max. Reverse Power Dissipation vs. Junction
Temperature
1.6
I
FAV
- Average Forward Current ( A )
40
C
D
- Diode Capacitance ( pF )
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
R
thJA
= 100 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
= 45 K/W
l = 10 mm
35
30
25
20
15
10
5
0
0.1
1
10
f = 1 MHz
20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (
°
C )
16379
100
16376
V
R
- Reverse Voltage ( V )
Figure 4. Max. Average Forward Current vs. Ambient Temperature
Figure 7. Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
I
R
- Reverse Current (
µA
)
100
10
1
25
16377
50
75
100
125
150
175
T
j
- Junction Temperature (°C )
Figure 5. Reverse Current vs. Junction Temperature
Document Number 86039
Rev. 1.6, 13-Apr-05
www.vishay.com
3
BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
Z
thp
- Thermal Resistance f. Pulse Cond. (K/W
1000
V
RRM
=1000 V
R
thJA
= 100 K/W
100
T
amb
=25°C
T
amb
=45°C
10
T
amb
=70
°C
1
10
–5
T
amb
=100
°C
10
–4
10
–3
10
–2
10
–1
10
0
10
1
t
p
- Pulse Length ( s )
10
0
10
1
I
FRM
- Repetitive Peak
Forward Current ( A )
T
amb
= 60°C
94 9522
Figure 8. Thermal Response
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
Cathode Identification
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
www.vishay.com
4
Document Number 86039
Rev. 1.6, 13-Apr-05
BYV12 / 13 / 14 / 15 / 16
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 86039
Rev. 1.6, 13-Apr-05
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
