2SC458, 2SC2308
Silicon NPN Epitaxial
ADE-208-1043 (Z)
1st. Edition
Mar. 2001
Application
•
Low frequency amplifier
•
Complementary pair with 2SA1029 and 2SA1030
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC458, 2SC2308
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SC458
30
30
5
100
–100
200
150
–55 to +150
2SC2308
55
50
5
100
–100
200
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2
2SC458, 2SC2308
Electrical Characteristics
(Ta = 25°C)
2SC458
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
30
30
5
—
—
100
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
0.67
230
1.8
4
16.5
70
130
11.0
Max
—
—
—
0.5
0.5
500
0.2
0.75
—
3.5
10
—
—
—
—
2SC2308
Min
55
50
5
—
—
100
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
0.67
230
1.8
4
16.5
70
130
11.0
Max
—
—
—
0.5
0.5
320
0.2
0.75
—
3.5
10
—
—
—
—
µS
V
V
MHz
pF
dB
kΩ
×
10
–6
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
=18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
V
CE
= 6 V, I
C
= 0.1 mA,
f = 1 kHz, R
g
= 500
Ω
V
CE
= 5V, I
C
= 0.1mA,
f = 270 Hz
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
V
CE(sat)
Base to emitter voltage V
BE
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Small signal input
impedance
Small signal voltage
feedback ratio
Small signal current
trancefer ratio
Small signal output
admittance
Note:
B
2SC458
2SC2308
100 to 200
100 to 200
Cob
NF
h
ie
h
re
h
fe
h
oe
1. The 2SC458 and 2SC2308 are grouped by h
FE
as follows.
C
160 to 320
160 to 320
D
250 to 500
—
See characteristic curves of 2SC458 (LG) and 2SC2310 except for the followings.
3
2SC458, 2SC2308
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
300
Noise Figure vs. Frequency
20
I
C
= 0.1 mA
R
g
= 500
Ω
V
CE
= 6 V
16
200
Noise Figure NF (dB)
12
8
100
4
0
50
100
150
Ambient Temperature Ta (°C)
0
30
100
300
1k
3k
Frequency f (Hz)
10k
30k
Noise Figure vs. Collector to Emitter Voltage
8
I
C
= 0.1 mA
R
g
= 500
Ω
f = 1kHz
Noise Figure NF (dB)
6
4
2
0
1
2
5
10
20
Collector to Emitter Voltage V
CE
(V)
30
4
2SC458, 2SC2308
Package Dimensions
As of January, 2001
Unit: mm
4.8
±
0.4
3.8
±
0.4
2.3 Max
0.55Max
0.7
0.60 Max
12.7 Min
5.0
±
0.2
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
5
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