BB202LX
Low-voltage variable capacitance diode
Rev. 01 — 11 April 2006
Preliminary data sheet
1. Product profile
1.1 General description
The BB202LX is a planar technology variable capacitance diode in a SOD882T ultra small
leadless plastic SMD package.
1.2 Features
I
I
I
I
I
Very steep Capacitance-Voltage (CV) curve
C
d(0V2)
: 30.5 pF; C
d(2V3)
: 9.5 pF
Ratio C
d(0V2)
to C
d(2V3)
minimal 2.5
Ultra small leadless SMD package
Low series resistance
1.3 Applications
I
Voltage Controlled Oscillators (VCO)
I
Electronic tuning in FM radios
I
Recommended as the reference VCO varactor for Philips Tuner ICs
TEA5764, TEA5767 and TEA5768 in mobile and portable platforms
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
1
2
sym008
Simplified outline
[1]
Symbol
Transparent
top view
[1]
The marking bar indicates the cathode.
Philips Semiconductors
BB202LX
Low-voltage variable capacitance diode
3. Ordering information
Table 2.
Ordering information
Name
BB202LX
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.4 mm
Version
SOD882T
Type number Package
4. Marking
Table 3.
BB202LX
Marking
Marking code
L1
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
T
stg
T
j
Parameter
reverse voltage
forward current
storage temperature
junction temperature
Conditions
Min
-
-
−55
−55
Max
6
10
+85
+85
Unit
V
mA
°C
°C
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
I
R
Parameter
reverse current
Conditions
see
Figure 3
V
R
= 6 V
V
R
= 6 V; T
j
= 85
°C
r
s
C
d
diode series resistance
diode capacitance
f = 100 MHz; see
Figure 2
see
Figure 1
and
Figure 4;
f = 1 MHz;
V
R
= 0.2 V
V
R
= 2.3 V
C
d
(
0V 2
)
------------------
-
C
d
(
2V 3
)
[1]
[1]
Min
-
-
-
28.2
7.2
2.5
Typ
-
-
0.35
-
-
-
Max
10
100
-
33.5
11.2
-
Unit
nA
nA
Ω
pF
pF
diode capacitance ratio
f = 1 MHz
r
s
is the value at which C
d
= 30 pF.
BB202LX_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 April 2006
2 of 7
Philips Semiconductors
BB202LX
Low-voltage variable capacitance diode
40
C
d
(pF)
30
001aae545
0.8
r
s
(Ω)
0.6
001aae546
20
0.4
10
0.2
0
10
−1
1
V
R
(V)
10
0
10
−1
1
10
V
R
(V)
10
2
f = 1 MHz; T
j
= 25
°C.
f = 470 MHz; T
j
= 25
°C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
Fig 2. Diode serial resistance as a function of reverse
voltage; typical values
10
3
I
R
(nA)
10
2
001aae541
10
−2
TC
Cd
(K
−1
)
10
−3
001aae542
10
10
−4
1
0
20
40
60
80
T
j
(°C)
100
10
−5
10
−1
1
10
V
R
(V)
10
2
T
j
= 0
°C
to 85
°C.
Fig 3. Reverse current as a function of junction
temperature; maximum values
Fig 4. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values
BB202LX_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 April 2006
3 of 7
Philips Semiconductors
BB202LX
Low-voltage variable capacitance diode
7. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.4 mm
(2×)
L
1
L
1
w
M
SOD882T
A
1
2
b (2×)
(2×)
w
e
1
M
B
A
A
1
y
E
A
D
(1)
B
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.40
0.36
A
1
max
0.04
b
0.55
0.45
D
0.65
0.55
E
1.05
0.95
e
1
0.65
L
1
0.30
0.22
w
0.1
y
0.03
0.5
scale
1 mm
Note
1.
The marking bar indicates the cathode
OUTLINE
VERSION
SOD882T
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-12-14
Fig 5. Package outline SOD882T
BB202LX_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 April 2006
4 of 7
Philips Semiconductors
BB202LX
Low-voltage variable capacitance diode
8. Revision history
Table 6.
Revision history
Release date
20060411
Data sheet status
Preliminary data sheet
Change notice
-
Supersedes
-
Document ID
BB202LX_1
BB202LX_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 April 2006
5 of 7
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