AP2434GN3-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Bottom Exposed DFN
▼
Low On-resistance
▼
Small Size & Lower Profile
▼
RoHS Compliant & Halogen-Free
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
18mΩ
10.5A
D2
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The DFN 3x3 package is well suited for low current DC/DC
applications.
G1
D1
G2
S1
S2
D1
D1
D2
D2
D2
D1
S1
G1
S2
G2
DFN 3x3
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Rating
30
+20
10.5
8.4
30
3.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Rating
40
Units
℃/W
1
201210042
Data & specifications subject to change without notice
AP2434GN3-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=6A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=11A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=11A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
20
-
-
10
3
4.5
9
5
21
4.5
140
100
1.3
Max. Units
-
18
26
3
-
10
+100
16
-
-
-
-
-
-
-
-
2.6
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
1100 1760
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=11A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
23
16
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <5sec ; 100 C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2434GN3-HF
40
40
T
A
=25 C
o
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
=4.0V
T
A
=150 C
o
30
10V
7.0V
6.0V
5.0V
V
G
=4.0V
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
2.0
I
D
=6A
T
A
=25 C
Normalized R
DS(ON)
30
1.6
o
I
D
=10A
V
G
=10V
R
DS(ON)
(m
Ω
)
20
1.2
10
0.8
0
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I
D
=250uA
10
1.6
8
Normalized V
GS(th)
1.4
I
S
(A)
T
j
=150
o
C
6
T
j
=25
o
C
1.2
0.8
4
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2434GN3-HF
10
1600
f=1.0MHz
I
D
=11A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
1200
C
iss
6
C (pF)
800
4
400
2
0
0
4
8
12
16
20
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor = 0.5
10
Operation in this
area limited by
R
DS(ON)
I
D
(A)
100us
1ms
1
0.2
0.1
0.1
0.05
0.1
10ms
100ms
1s
T
A
=25
o
C
Single Pulse
DC
P
DM
0.02
t
T
0.01
Duty factor = t/T
Peak T
j
= PDM x R
thja
+ T
a
Single Pulse
R
thja
=100
o
C/W
0.01
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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