1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex filters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode is a function of the current
flowing in the diode. These current controlled resistors are
specified for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned filters, analog phase shifters, and
RF limiters.
Outline 15 diodes are available on tape and reel. The tape
and reel specification is patterned after RS-296-D.
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Outline 15
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
Maximum Ratings
Junction Operating and
Storage Temperature Range.........................-65°C to +150°C
Power Dissipation 25°C .................................................250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ...................................... same as V
BR
Maximum Soldering Temperature ............... 260°C for 5 sec
CATHODE
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Mechanical Specifications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restricted so that the bend starts at least 1/16 inch (1.6 mm)
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specifications at T
A
= 25°C
Part
Number
5082-
Maximum
Total
Capacitance
C
T
(pF)
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Residual Series
Resistance
R
S
(Ω)
1.0
1.25
1.25
1.5
0.6**
I
F
=100 mA
*I
F
= 20 mA
**I
F
= 10 mA
f = 100 MHz
Effective Carrier
Lifetime
τ
(ns)
100 (min.)
100 (min.)
100 (min.)
100 (min.)
70 (typ.)*
I
F
= 50 mA
I
R
= 250 mA
*I
F
= 10 mA
*I
R
= 6 mA
Reverse Recovery
Time
t
rr
(ns)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
12 (typ.)
I
F
= 20 mA
V
R
= 10 V
90% Recovery
General Purpose Switching and Attenuating
3001
0.25
200
3039
0.25
150
1N5719
0.3**
150
3077
0.3
200
Band Switching
3188
1.0*
35
Test
V
R
= 50 V
V
R
= V
BR
Conditions
*V
R
= 20 V
Measure
**V
R
= 100 V
I
R
≤ 10 µA
f = 1 MHz
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at T
A
= 25°C
Effective
Carrier
Lifetime
τ
(ns)
1300 (typ.)
1300 (typ.)
1300 (typ.)
2500 (typ.)
Min.
Breakdown
Voltage
V
BR
(V)
100
100
50
100
Max.
Residual
Series
Resistance
R
S
(
Ω
)
2.5
2.5
3.5
Max.
Total
Capacitance
C
T
(pF)
0.4
0.4
0.4
0.4
High
Resistance
Limit, R
H
(
Ω
)
Min.
1000
1000
1500
Max.
Low
Resistance
Limit, R
L
(
Ω
)
Min.
Max.
8**
8**
8**
8**
Part
Number
5082-3080
1N5767*
5082-3379
5082-3081
Max.
Difference
in
Resistance
vs. Bias
Slope, Dc
Test
Conditions
I
F
= 50 mA
I
R
= 250 mA
V
R
= V
BR
, I
F
= 100 mA
Measure f = 100 MHz
I
R
≤ 10 µA
V
R
= 50 V
f = 1 MHz
I
F
= 0.01 mA
f = 100 MHz
I
F
= 1.0 mA
I
F
= 20 mA**
f = 100 MHz
Batch
Matched at
I
F
= 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications:
τ
= 1.0 msec minimum
I
R
= 1 µA maximum at V
R
= 50 V
V
F
= 1 V maximum at I
F
= 100 mA.
2
Typical Parameters at T
A
= 25°C (unless otherwise noted)
100
I
F
– FORWARD CURRENT (mA)
RF RESISTANCE (OHMS)
10
100
10
1
0.1
0.001
5082-3001
5082-3039
5082-3077
IN5719
RF RESISTANCE (OHMS)
5082-3001, 3039,
3077, 3080
IN5719
10,000
1000
100,000
10,000
1000
100
10
1
0.001
5082-3080
5082-3379
1
5082-3081
125°C
25°C
–60°C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
F
– FORWARD VOLTAGE (V)
I
F
– FORWARD BIAS CURRENT (mA)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. Forward Current vs. Forward
Voltage.
1.0
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
2.5
2.0
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
1000
1.5
1.0
.5
0
REVERSE RECOVERY TIME (ns)
CAPACITANCE (pF)
CAPACITANCE (pF)
5082-3001
3039
3077
IN5719
.5
5082-3039
IN5719
5082-3001
100
V
R
= 5 V
V
R
= 10 V
V
R
= 20 V
5082-3188
5082-3080
5082-3081
5082-3379
0
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
10
0
10
20
30
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
FORWARD CURRENT (mA)
Figure 4. Typical Capacitance vs.
Reverse Voltage.
0
Figure 5. Typical Capacitance vs.
Reverse Voltage.
10
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
BELOW FIRST ORDER (dB)
20
40
60
80
100
BELOW FIRST ORDER (dB)
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
20
30
40
50
60
70
80
0
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
100% Modulation 15 kHz
40 dB mV Output Levels
5082-3080
5082-3379
5082-3080
5082-3379
5082-3081
5082-3081
0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
FREQUENCY (MHz)
MODULATED FREQUENCY (MHz)
Figure 7. Typical Second Order
Intermodulation Distortion.
Figure 8. Typical Cross Intermodulation
Distortion.
3
Diode Package Marking
1N5xxx
would be marked:
1Nx
xxx
YWW
5082-xxxx
xx
xx
YWW
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part num-
ber. Y is the last digit of the calendar year. WW is the work week of manufac-
ture.
Examples of diodes manufactured during workweek 45 of 1999:
1N5712
would be marked:
1N5
712
945
5082-3080
30
80
945
Part Number Ordering Information
Part Number
5082-3xxx#T25/1N57xx#T25
5082-3xxx#T50/ 1N57xx#T50
5082-3xxx/ 1N57xx
No. of devices
2500
5000
100
Container
Tape & Reel
Tape & Reel
Antistatic bag
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-3339EN
AV02-0477EN - June 6, 2007
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