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5962R0520801VYC

产品描述Standard SRAM, 512KX8, 17ns, CMOS
产品类别存储    存储   
文件大小352KB,共14页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
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5962R0520801VYC概述

Standard SRAM, 512KX8, 17ns, CMOS

5962R0520801VYC规格参数

参数名称属性值
厂商名称Microchip(微芯科技)
包装说明DFP, FL36,.5
Reach Compliance Codecompliant
ECCN代码3A001.A.2.C
最长访问时间17 ns
I/O 类型COMMON
JESD-30 代码R-XDFP-F36
JESD-609代码e4
内存密度4194304 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量36
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512KX8
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DFP
封装等效代码FL36,.5
封装形状RECTANGULAR
封装形式FLATPACK
并行/串行PARALLEL
电源3.3 V
认证状态Qualified
筛选级别MIL-PRF-38535 Class V
座面最大高度3.05 mm
最大待机电流0.0015 A
最小待机电流2 V
最大压摆率0.18 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式FLAT
端子节距1.27 mm
端子位置DUAL
总剂量300k Rad(Si) V
宽度12.195 mm
Base Number Matches1

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Features
Operating Voltage: 3.3V, 5V tolerant
Access Time:
– 17 ns
– 15 ns
Very Low Power Consumption
– Active: 610 mW (Max) @ 17 ns
(1)
, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
Wide Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
@125°C
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 2000V
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
1. 650 mW (Max) @ 15 ns
Note:
Description
The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns over the full military temperature range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The AT60142FT is processed according to the methods of the latest revision of the
MIL PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
5V Tolerant
Very Low Power
CMOS SRAM
AT60142FT
7726C–AERO–05/10
1

 
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