FDW2508PB Dual P-Channel
–1.8V
Specified PowerTrench
®
MOSFET
October 2006
FDW2508PB
Dual P-Channel
–1.8V
Specified PowerTrench
®
MOSFET
–12V, –6A,
18mΩ
Features
General Description
This P-Channel –1.8V specified MOSFET uses Fairchild
Semiconductor’s advanced low voltage PowerTrench
®
. It has
been optimized for battery power management applications.
Max r
DS(on)
= 18mΩ at V
GS
= –4.5V, I
D
= –6A
Max r
DS(on)
= 22mΩ at V
GS
= –2.5V, I
D
= –5A
Max r
DS(on)
= 30mΩ at V
GS
= –1.8V, I
D
= –4A
Low gate charge
High performance trench technology for extremely low r
DS(on)
Low profile TSSOP-8 package
RoHS compliant
Application
Power management
Load switch
Battery protection
TSSOP8
Pin 1
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Power Dissipation-Dual Operation
Power Dissipation-Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
–12
±8
–6
–30
2
1.6
1
–55 to +150
°C
W
Units
V
V
A
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
80
125
°C/W
Package Marking and Ordering Information
Device Marking
2508PB
Device
FDW2508PB
Package
TSSOP-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDW2508PB Rev.B
1
www.fairchildsemi.com
FDW2508PB Dual P-Channel
–1.8V
Specified PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= –250µA, V
GS
= 0V
I
D
= –250µA, referenced to 25°C
V
DS
= –10V
V
GS
= 0V
T
J
= 125°C
V
GS
= ±8V, V
DS
= 0V
–12
–12
–1
–100
±100
V
mV/°C
µA
nA
On Characteristics
(Note 2)
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250µA
I
D
= –250µA, referenced to 25°C
V
GS
= –4.5V, I
D
= –6A
Static Drain to Source On-Resistance
V
GS
= –2.5V, I
D
= –5A
V
GS
= –1.8V, I
D
= –4A
V
GS
= –4.5V, I
D
= –6A,T
J
= 125°C
Forward Transconductance
V
DS
= –5V, I
D
= –6A
–0.4
–0.6
3
15
18
22
23
35
18
22
30
30
S
mΩ
–1.5
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= –6V, V
GS
= 0V,
f = 1MHz
2835
440
370
3775
590
555
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= –4.5V ,V
DD
= –6V
I
D
= –6A
V
DD
= –6V, I
D
= –6A
V
GS
= –4.5V, R
GEN
= 6Ω
8
16
254
106
32
4.3
7.1
16
29
407
170
45
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= –1.1A
(Note 2)
–0.6
106
110
–1.2
159
165
V
ns
nC
I
F
= –6A, di/dt = 100A/µs
Notes:
1:
R
θJA
is the sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drian pins. R
θJC
is
guaranteed by design while
R
θCA
is determined by the user's board design.
a. R
θJA
is 80°C/W(steady
state) when mounted on a 1
in
2
pad of 2 oz copper.
b.R
θJA
is 125°C/W(steady state)
when mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDW2508PB Rev.B
2
www.fairchildsemi.com
FDW2508PB Dual P-Channel
–1.8V
Specified PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
30
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
4.5
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
= -1.5V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
-I
D
, DRAIN CURRENT (A)
24
18
12
6
0
0.0
V
GS
= -1.5V
V
GS
= -4.5V
V
GS
= -1.8V
V
GS
= -2.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
0.5
1.0
1.5
2.0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
10
15
20
-I
D
, DRAIN CURRENT(A)
25
30
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
40
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
I
D
= -6A
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
1.4
1.2
1.0
0.8
0.6
-50
I
D
= -6A
V
GS
= -4.5V
35
30
25
20
15
10
1.5
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE
(
o
C
)
150
150
3.0
4.5
6.0
-V
GS
, GATE TO SOURCE VOLTAGE (V)
7.5
Figure 3. Normalized On Resistance
vs Junction Temperature
30
-I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to
Source Voltage
40
V
GS
= 0V
-I
D
, DRAIN CURRENT (A)
25
20
15
10
5
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
10
T
J
= 150
o
C
1
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0.1
0
0.5
1.0
1.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
0.01
0.2
0.4
0.6
0.8
1.0
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDW2508PB Rev.B
3
www.fairchildsemi.com
FDW2508PB Dual P-Channel
–1.8V
Specified PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
-V
GS
, GATE TO SOURCE VOLTAGE(V)
4.5
4.0
CAPACITANCE (pF)
10
4
C
iss
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
Q
g
, GATE CHARGE(nC)
30
35
V
DD
= -8V
V
DD
= -4V
V
DD
= -6V
10
3
C
oss
C
rss
f = 1MHz
V
GS
= 0V
10
0.1
2
1
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
P
(
PK
)
, PEAK TRANSIENT POWER (W)
100
-I
D
, DRAIN CURRENT (A)
200
100
V
GS
= -8V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150
–
T
A
-----------------------
-
125
10
1
0.1
0.01
1E-3
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
TA = 25
O
C
1ms
10ms
100ms
1s
DC
10
SINGLE PULSE
1
10
30
1
-3
10
10
-2
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
10
10
10
t, PULSE WIDTH (s)
-1
0
1
10
2
10
3
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
0.01
SINGLE PULSE
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
1E-3
-3
10
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
FDW2508PB Rev.B
4
FDW2508PB Dual P-Channel
–1.8V
Specified PowerTrench
®
MOSFET
FDW2508PB Rev.B
5
www.fairchildsemi.com
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