HM53461 Series, HM53462 Series
65,536-word
×
4-bit Multiport CMOS Video RAM
The HM53461/HM53462 is a 262,144-bit
multiport memory equipped with a 64 k-word
×
4-
bit dynamic RAM port and a 256-word
×
4-bit
serial access memory (SAM) port. The SAM port
is connected to an internal 1,024-bit data register
through a 256-word
×
4-bit serial read or write
access control. In the read transfer cycle, the
memory cell data is transferred from a selected
word line of the RAM port to the data register. The
RAM port has a write mask capability in addition
to the conventional operation mode. Write bit
selection out of four data bits can be achieved. The
Hitachi 2 µm CMOS process achieves a fast serial
access operation and low power dissipation. All
inputs and outputs, including clocks, are TTL
compatible. In HM53462, the RAM port has logic
operation capability. By using this function, logic
operation between memory data and input data can
be done in one cycle.
• Data transfer operation (between RAM and
SAM)
• Fast serial access operation asynchronized with
RAM port (except data transfer cycle)
• Real time read transfer capability
• Write mask mode capability
• Logic operation capability between Din and
Dout (HM53462 Series)
• SAM organization can be changed to 1024
×
1
(HM53462 Series)
Ordering Information
Type No.
HM53461P-10
HM53461P-12
HM53461P-15
Access
Time
100 ns
120 ns
150 ns
100 ns
120 ns
150 ns
100 ns
120 ns
150 ns
100 ns
120 ns
150 ns
100 ns
120 ns
150 ns
100 ns
120 ns
150 ns
300-mil, 24-pin
plastic SOJ
(CP-24D)
28-pin
plastic ZIP
(ZP-24)
400-mil, 24-pin
plastic DIP
(DP-24A)
24-pin
plastic SOJ
(CP-24D)
24-pin
plastic ZIP
(ZP-24)
Package
400-mil, 24-pin
plastic DIP
(DP-24A)
Features
• Multiport organization
(RAM; 64 k-word
×
4-bit and SAM;
256 word
×
4-bit)
• Double layer polysilicon/polycide n-well CMOS
process
• Single 5 V (±10%)
• Low power
— Active: RAM: 380 mW max
SAM: 220 mW max
— Standby: 40 mW max.
• Access Time
— RAM: 100 ns/120 ns/150 ns
— SAM: 40 ns/40 ns/60 ns
• Cycle time
— Random read or write cycle time (RAM):
190 ns/220 ns/260 ns
— Serial read or write cycle time (SAM):
40 ns/40 ns/60 ns
• TTL compatible
• 256 refresh cycles: 4 ms
• Refresh function
—
RAS
-only refresh
—
CAS
-before-
RAS
refresh
— Hidden refresh
HM53461ZP-10
HM53461ZP-12
HM53461ZP-15
HM53461JP-10
HM53461JP-12
HM53461JP-15
HM53462P-10
HM53462P-12
HM53462P-15
HM53462ZP-10
HM53462ZP-12
HM53462ZP-15
HM53462JP-10
HM53462JP-12
HM53462JP-15
1
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HM53461, HM53462 Series
Block Diagram
(cont)
HM53462 Series
3
4
HM53461, HM53462 Series
Dout
1
2
Dout
256 bit data register
1 of 256 selector
Logic operation
unit
SC
4
Din
1
2
3
Memory array
256
×
256
Din
Data
transfer
control
SI/O1
DT
WE
Mask
register
P
3
4
S
By-1 Mode
(1024
×
4)
Other SI/O
(2–4) are in
high-Z state
2
SI/O1
By-4 Mode 256
×
4
(Normal Mode)
Absolute Maximum Ratings
•
•
•
•
•
•
Voltage on any pin relative to V
SS
:
Power supply voltage relative to V
SS
:
Operating temperature, Ta (Ambient):
Storage temperature:
Short circuit output current:
Power dissipation:
–1 V to +7 V
–0.5 V to +7 V
0°C to +70°C
–55°C to +125°C
50 mA
1W
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
*1
Parameter
Supply voltage
Input high voltage
Input low voltage
Symbol
V
CC
V
IH
V
IL
Min
4.5
2.2
–0.5
*2
Typ
5.0
—
—
Max
5.5
6.0
0.8
Unit
V
V
V
Notes: 1. All voltages refernced to V
SS
.
2. –3.0 V for pulse wideth
≤
10 ns.
4
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