电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N44S3

产品描述MECHANICAL CHARACTERISTICS
文件大小113KB,共3页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 全文预览

1N44S3概述

MECHANICAL CHARACTERISTICS

文档预览

下载PDF文档
^e-fni-^onductoi ^Product*, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IN4156, IN4157, IN4453,
IN4829, IN483O, IN5179
STABISTORS
Also,
T\gt\t
Tolerance
MPD100 thru MPD400A
or
MZ2360 and MZ2361
PACKAGE
DIMENSIONS
APPLICATION
These
axial
lead diodes represent configurations of one to four* p-n junctions
in series which may be used in any application requiring light tolerance, low
voltage levels versus current. This method of low voltage regulation is com-
paritively superior in dynamic impedence (voltage change versus current) than
low voltage zeners where tunneling instead of avalanche current is dominant.
Typical applications include use as signal limiters, level shifters in transistor
logic, meter protectors, and low voltage regulators. For computer circuit ap-
plications, a controlled stored charge selection is provided as well.
In addition, these devices may be used for temperature compensation wherein
each p-n junction contributes approximately -2 mV/°C each.
•Consult factory for more than four p-n junction configurations.
.010 MAX. I
2.03 OIA.
POLARITY
MARK
(CAtHOOEl
iffi ,
DESCRIPTION/FEATURES
H
B
H
0
E3
Hermetically Sealed Glass Packages (DO-35)
High Reverse Breakdown and Low Leakage
Excellent Low Voltage Regulation
Controlled Stored Charge
Planar Passivated Die Elements
.W&J&.
rj
IA
.W-0,559 ""
All dimensions in '"--
ni.ni.
DO-35
MECHANICAL
CHARACTERISTICS
MAXIMUM RATINGS
500 mW dc Power Rating**
Power Derating 4.0 mW/°C above 50 °C
Junction and Storage Temperatures: -65"C to +175°C
"Consult factory for ratings up to I.5W.
*Cnse: Hermetically sealed glass DO-35.
DO-7 and DO-41 glass are
optional. Single p-n junction
devices also offered in DO-41
plastic.
Finish: All external surfaces are
corrosion resistant and leads
solderable.
Thermal Resistance: 200° C/W typical
for DO-3S at 0.375
inches from body.
Mounting Position: Any.
Polarity: Cathode marked with band. To be
operated with cathode negative for
normal low voltage operation
• Designate case
sin
when ordering.
NJ Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press However NJ
Semi-CoinJuctor$ assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages
rs til v.-rit'v tli-
are
rnrivnl hpt'i-irf ntarino nnleni

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2114  472  961  228  1972  25  8  2  38  30 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved