MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S21090L/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF5S21090LR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
-
5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 26%
IM3 — - 37.5 dBc
ACPR — - 40.5 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
224
1.28
- 65 to +150
200
Unit
Vdc
Vdc
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S21090LSR3
2170 MHz, 19 W AVG.,
2 x W - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21090LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21090LSR3
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 19 W CW
Symbol
R
θJC
Value (1,2)
0.78
0.80
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S21090LR3 MRF5S21090LSR3
1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.9
3.9
0.25
5
3.5
—
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 19 W Avg., I
DQ
= 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(1) Part is internally matched both on input and output.
G
ps
12.5
14.5
—
dB
η
24
26
—
%
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 40.5
- 38
dBc
IRL
—
- 15
-9
dB
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
C3
R1
V
GG
R2
C4
C5
C9
C6
Z4
Z1
Z2
C14
C1
Z5
Z3
Z6
Z7
Z8
DUT
Z9
Z10
Z11 Z12
Z13
Z15
C2
Z14
Z16
Z17
Z18
Z19
Z20
Z21
C10
C7
C8
W1
C11
C12
+
C13
R3
R4
V
DD
RF
INPUT
RF
OUTPUT
C15
Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
1.0856″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.230″ x 0.080″ Microstrip
0.347″ x 0.208″ Microstrip
0.090″ x 0.208″ Microstrip
0.650″ x 0.176″ Taper
0.623″ x 0.610″ Microstrip
0.044″ x 0.881″ Microstrip
0.044″ x 0.869″ Microstrip
1.076″ x 0.446″ Microstrip
0.320″ x 0.393″ Microstrip
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
PCB
0.609″ x 0.220″ Microstrip
0.290″ x 0.106″ Microstrip
0.290″ x 0.106″ Microstrip
0.080″ x 0.025″ Microstrip
1.080″ x 0.160″ Microstrip
0.180″ x 0.080″ Microstrip
0.260″ x 0.147″ Microstrip
0.500″ x 0.080″ Microstrip
0.199″ x 0.147″ Microstrip
0.365″ x 0.080″ Microstrip
Arlon GX0300 - 55- 22, 0.03″,
ε
r
= 2.55
Figure 1. MRF5S21090 Test Circuit Schematic
Table 1. MRF5S21090 Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C12
C5
C6
C7
C8
C9, C10
C11
C13
C14, C15
R1
R2
R3, R4
W1
Description
9.1 pF Chip Capacitor, B Case
8.2 pF Chip Capacitor, B Case
2.0 pF Chip Capacitor, B Case
0.1
µF
Chip Capacitors, B Case
5.6 pF Chip Capacitor, B Case
5.1 pF Chip Capacitor, B Case
7.5 pF Chip Capacitor, B Case
1.2 pF Chip Capacitor, B Case
0.56
µF
Chip Capacitors, B Case
1000 pF Chip Capacitor, B Case
470
µF,
35 V Electrolytic Capacitor
0.4 – 2.5 Variable Capacitors, Gigatrim
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
Wire Strap
Value, P/N or DWG
100B9R1CP 500X
100B8R2CP 500X
100B2R0BP 500X
CDR33BX104AKWS
100B5R6CP 500X
100B5R1CP 500X
100B7R5JP 500X
100B1R2BP 500X
700A561MP 150X
100B102JP 500X
95F4579
44F3367
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
ATC
ATC
ATC
Kemet
ATC
ATC
ATC
ATC
ATC
ATC
Newark
Newark
Newark
Newark
Garrett Electronics
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S21090LR3 MRF5S21090LSR3
3
Freescale Semiconductor, Inc.
C3 C5
V
GG
R2
R1
R3
C4
C9
C10
C7 C8
C13
C11
C6
C12
R4 W1
V
DD
C1
C2
C14
CUT OUT AREA
C15
Freescale Semiconductor, Inc...
MRF5S21090
Rev 5
Figure 2. MRF5S21090 Test Circuit Component Layout
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
IM3
ACPR
2100
2120
2140
2160
2180
IRL
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
G
ps
η
V
DD
= 28 Vdc, P
out
= 19 W (Avg.), I
DQ
= 850 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
40
35
30
25
20
−20
−25
−30
−35
−40
−45
2200
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
−10
−15
−20
−25
−30
−35
5
2080
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2 - Carrier W - CDMA Broadband Performance
17
IM3, 3RD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1200 mA
1000 mA
15
850 mA
V
DD
= 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−15
−20
−25
−30
−35
−40
−45
−50
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
16
G ps , POWER GAIN (dB)
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
I
DQ
= 450 mA
1200 mA
14
650 mA
13
IRL, INPUT RETURN LOSS (dB)
450 mA
1000 mA
650 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
850 mA
100
12
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
−45
7th Order
−50
−55
−60
0.1
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
1
TWO−TONE SPACING (MHz)
10
5th Order
3rd Order
Pout , OUTPUT POWER (dBm)
57
55
53
51 P1dB = 50.47 dBm (111.4 W)
Actual
49
47
45
30
32
34
36
38
40
42
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
µsec(on),
1 msec(off)
Center Frequency = 2140 MHz
Ideal
P3dB = 51.17 dBm (130.9 W)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S21090LR3 MRF5S21090LSR3
5
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