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WCTQ10116000H

产品描述RES NET,THIN FILM,1.6K OHMS,200WV,2.5% +/-TOL,-100,100PPM TC,0303 CASE
产品类别无源元件    电阻器   
文件大小98KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
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WCTQ10116000H概述

RES NET,THIN FILM,1.6K OHMS,200WV,2.5% +/-TOL,-100,100PPM TC,0303 CASE

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CTQ
Vishay Electro-Films
Thin Film Center-Tapped Resistors
CHIP
RESISTORS
FEATURES
Product may
not be to scale
Wire bondable
Center tap feature
Chip size: 0.030 inches square
Resistance range total: 10
Ω
to 1 MΩ
Resistor material: Tantalum nitride, self-passivating
Moisture resistant
Quartz substrate
Low shunt capacitance < 0.1 pF
I
V
The CTQ series resistor chips offer a wide resistance range with
lower shunt capacitance than can be offered with the silicon
based resistors but only at a lower power level.
The CTQ offers the designer flexibility in use as either a
single value resistor or as two resistor with a center tap
feature. The CTQs six bonding pads allows the user
increased layout flexibility.
The CTQs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The CTQs are 100 % electrically tested and
visually inspected to MIL-STD-883.
R
A
R
B
V
I
V
APPLICATIONS
The CTQ center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, low shunt
capacitance and tracking between two resistors is critical.
For low values, the resistance of the six bonding pad configuration can vary, depending on the method of measurement used.
Vishay EFI measures low-value resistors by the four-wire kelvin technique.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
Tightest Standard Tolerance Available
0.5 %
0.1 %
PROCESS CODE
CLASS H*
CLASS K*
132
130
131
102
100
101
*MIL-PRF-38534 inspection criteria
± 25 ppm/°C
± 50 ppm/°C
± 100 ppm/°C
10
Ω
25
Ω
100
Ω
360 kΩ 620 kΩ 1 MΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
TCR Tracking Between Halves (R
A
,
R
B
)
Center Tap Ratio,
R
A
/R
B
: Tolerance
Noise, MIL-STD-202, Method 308, 100
Ω
- 250 kΩ
< 100
Ω
or > 251 kΩ
Moisture Resistance, MIL-STD-202, Method 106
Stability, 1000 h, + 125 °C, 30 mW
Operating Temperature Range
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
High Temperature Exposure, + 150 °C, 100 h
Dielectric Voltage Breakdown
Insulation Resistance
Operating Voltage
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C)
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
*5 ppm/°C for
R
< 100. 20 ppm/°C for
R
< 20
www.vishay.com
82
For technical questions, contact: efi@vishay.com
Document Number: 61030
Revision: 13-Mar-08
± 2 ppm/°C*
1 ± 1 % standard
- 35 dB typ.
- 20 db typ.
± 0.5 % max.
ΔR/R
± 0.25 % max.
ΔR/R
- 55 °C to + 125 °C
± 0.1 % max.
ΔR/R
± 0.2 % max.
ΔR/R
400 V
10
12
min.
200 V
60 mW
± 0.25 % max.
ΔR/R
%
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