XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL
DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
: Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■PIN
CONFIGURATION/
MARKING
■PRODUCT
NAMES
PRODUCTS
XP151A11B0MR
XP151A11B0MR-G
(*)
PACKAGE
SOT-23
SOT-23
ORDER UNIT
3,000/Reel
3,000/Reel
1 1 1 x
G：Gate
S：Source
D：Drain
(*)
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
30
±20
1
4
1
0.5
150
-55~150
V
V
A
A
A
W
℃
℃
* When implemented on a ceramic PCB
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XP151A11B0MR-G
■ELECTRICAL
CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *1
Forward Transfer Admittance *1
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vf
CONDITIONS
Vds= 30V, Vgs= 0V
Vgs=
±20V,
Vds= 0V
Id= 1mA, Vds= 10V
Id= 0.5A, Vgs= 10V
Id= 0.5A, Vgs= 4.5V
Id= 0.5A, Vds= 10V
If= 1A, Vgs= 0V
MIN.
-
-
1.0
-
-
-
-
TYP.
-
-
-
0.09
0.13
2.4
0.8
MAX.
10
±10
3.0
0.12
0.17
-
1.1
T
a = 25℃
UNITS
μA
μA
V
Ω
Ω
S
V
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds= 10V, Vgs=0V
f=1MHz
CONDITIONS
MIN.
-
-
-
TYP.
150
90
30
MAX.
-
-
-
T
a = 25℃
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs= 5V, Id= 0.5A
Vdd= 10V
CONDITIONS
MIN.
-
-
-
-
TYP.
10
15
25
45
MAX.
-
-
-
-
T
a = 25℃
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN.
-
TYP.
250
MAX.
-
UNITS
℃/W
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XP151A11B0MR-G
■TYPICAL
PERFOMANCE CHARACTERISTICS
3/5
XP151A11B0MR-G
■TYPICAL
PERFOMANCE CHARACTERISTICS (Continued)
(11) Standardized transition Thermal Resistance vs. Pulse Width
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XP151A11B0MR-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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