HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Data Sheet
January 2000
File Number
4825
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S, HGT1S3N60A4S and the
HGTP3N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
• 12mJ E
AS
Capability
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
www.Fairchild.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
HGTD3N60A4S
HGT1S3N60A4S
HGTP3N60A4
PACKAGE
TO-252AA
TO-263AB
TO-220AB
BRAND
3N60A4
Packaging
JEDEC TO-252AA
COLLECTOR
3N60A4
3N60A4
G
E
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.
HGT1S3N60A4S9A
JEDEC TO-263AB
Symbol
C
G
E
G
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Single Pulse Avalanche Energy at T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
600
17
8
40
±20
±30
15A at 600V
12mJ at 3A
70
0.56
-55 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
15
-
-
-
-
4.5
-
15
12
-
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
2.0
1.6
6.1
-
-
-
8.8
21
26
6
11
73
47
37
55
25
MAX
-
-
250
2.0
2.7
2.2
7.0
±250
-
-
-
25
32
-
-
-
-
-
70
35
UNITS
V
V
µA
mA
V
V
V
nA
A
mJ
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 3A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
E
AS
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 50Ω, V
GE
= 15V
L = 200µH, V
CE
= 600V
I
CE
= 3A, L = 2.7mH
I
C
= 3A, V
CE
= 300V
I
C
= 3A,
V
CE
= 300V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 3A
V
CE
= 390V
V
GE
= 15V
R
G
= 50Ω
L = 1mH
Test Circuit - Figure 20
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 3A
V
CE
= 390V
V
GE
= 15V
R
G
= 50Ω
L = 1mH
Test Circuit - Figure 20
MIN
-
-
-
-
-
-
-
-
TYP
5.5
12
110
70
37
90
50
-
MAX
8
15
165
100
-
100
80
1.8
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
20
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
V
GE
= 15V
16
T
J
= 150
o
C, R
G
= 50Ω, V
GE
= 15V, L = 200µH
16
12
12
8
8
4
4
0
25
50
75
100
125
150
0
0
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
600
f
MAX
, OPERATING FREQUENCY (kHz)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
T
C
75
o
C
V
GE
15V
V
CE
= 390V, R
G
= 50Ω, T
J
= 125
o
C
t
SC
18
16
14
12
10
8
6
4
10
13
14
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
I
SC
56
48
40
32
24
16
8
0
15
300
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 1.8
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 50Ω, L = 1mH, V
CE
= 390V
1
4
5
2
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
6
100
50
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
20
64
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
T
J
= 125
o
C
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
16
T
J
= 125
o
C
T
J
= 150
o
C
16
T
J
= 150
o
C
12
12
8
8
4
T
J
= 25
o
C
4
T
J
= 25
o
C
0
0
0
1
2
3
4
5
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
240
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
E
ON2
, TURN-ON ENERGY LOSS (µJ)
R
G
= 50Ω, L = 1mH, V
CE
= 390V
200
160
120
80
40
0
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
1
2
3
4
5
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
140
R
G
= 50Ω, L = 1mH, V
CE
= 390V
120
100
80
60
40
20
0
T
J
= 25
o
C, V
GE
= 12V OR 15V
1
2
3
4
5
6
T
J
= 125
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
16
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 50Ω, L = 1mH, V
CE
= 390V
32
R
G
= 50Ω, L = 1mH, V
CE
= 390V
28
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
8
t
rI
, RISE TIME (ns)
24
20
16
12
8
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
4
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
1
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
6
0
1
2
3
4
5
6
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Typical Performance Curves
112
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
V
GE
= 15V, T
J
= 125
o
C
104
t
fI
, FALL TIME (ns)
96
88
80
72
64
56
48
1
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 125
o
C
88
80
72
64
56
48
R
G
= 50Ω, L = 1mH, V
CE
= 390V
40
2
3
4
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
6
1
2
3
T
J
= 25
o
C, V
GE
= 12V OR 15V
4
5
6
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
96
R
G
= 50Ω, L = 1mH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
16
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 100Ω, T
J
= 25
o
C
V
CE
= 600V
12
8
V
CE
= 200V
V
CE
= 400V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
4
0
4
6
8
10
12
14
4
8
12
16
20
24
28
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (µJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (µJ)
FIGURE 14. GATE CHARGE WAVEFORMS
250
R
G
= 50Ω, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
1000
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
200
I
CE
= 4.5A
150
I
CE
= 3A
I
CE
= 4.5A
I
CE
= 3A
100
I
CE
= 1.5A
100
50
I
CE
= 1.5A
0
25
30
3
10
100
R
G
, GATE RESISTANCE (Ω)
1000
50
125
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B
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