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MT46H32M32LFMA-6AT:B

产品描述DDR DRAM, 32MX32, 5ns, CMOS, PBGA168, 12 X 12 MM, GREEN, PLASTIC, WFBGA-168
产品类别存储    存储   
文件大小1MB,共100页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT46H32M32LFMA-6AT:B概述

DDR DRAM, 32MX32, 5ns, CMOS, PBGA168, 12 X 12 MM, GREEN, PLASTIC, WFBGA-168

MT46H32M32LFMA-6AT:B规格参数

参数名称属性值
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA,
针数168
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间5 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码S-PBGA-B168
JESD-609代码e1
长度14 mm
内存密度1073741824 bit
内存集成电路类型DDR DRAM
内存宽度32
功能数量1
端口数量1
端子数量168
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度105 °C
最低工作温度-40 °C
组织32MX32
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状SQUARE
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
座面最大高度0.8 mm
自我刷新YES
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN SILVER COPPER
端子形式BALL
端子节距0.5 mm
端子位置BOTTOM
宽度14 mm
Base Number Matches1

文档预览

下载PDF文档
1Gb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H64M16LF – 16 Meg x 16 x 4 banks
MT46H32M32LF – 8 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 64 Meg x 16 (16 Meg x 16 x 4
banks)
– 32 Meg x 32 (8 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
• PoP (plastic "green" package)
– 168-ball WFBGA (12mm x 12mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 5.4ns @ CL = 3 (185 MHz)
– 6ns @ CL = 3 (166 MHz)
– 7.5ns @ CL = 3 (133 MHz)
• Power
– Standard I
DD2
/I
DD6
• Operating temperature range
– Commercial (0˚ to +70˚C)
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
3
• Design revision
Notes:
Marking
H
64M16
32M32
LF
BF
B5
MA
-5
-54
-6
-75
None
None
IT
AT
:B
1. Only available for x16 configuration.
2. Only available for x32 configuration.
3. Contact factory for availability.
PDF: 09005aef83d9bee4
1gb_ddr_mobile_sdram_t68m.pdf - Rev. J 1/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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