Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | SOJ |
包装说明 | SOJ, SOJ20/26,.34 |
针数 | 20 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
访问模式 | NIBBLE |
最长访问时间 | 100 ns |
其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
I/O 类型 | SEPARATE |
JESD-30 代码 | R-PDSO-J20 |
JESD-609代码 | e0 |
长度 | 17.145 mm |
内存密度 | 1048576 bi |
内存集成电路类型 | NIBBLE MODE DRAM |
内存宽度 | 1 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 20 |
字数 | 1048576 words |
字数代码 | 1000000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 1MX1 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOJ |
封装等效代码 | SOJ20/26,.34 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5 V |
认证状态 | Not Qualified |
刷新周期 | 512 |
座面最大高度 | 3.68 mm |
最大待机电流 | 0.001 A |
最大压摆率 | 0.065 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
Base Number Matches | 1 |
KM41C1001BJ-10 | KM41C1001BZ-10 | KM41C1001BZ-8 | KM41C1001BJ-8 | KM41C1001BJ-6 | KM41C1001BZ-6 | KM41C1001BJ-7 | KM41C1001BP-10 | KM41C1001BP-6 | KM41C1001BP-7 | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 | Nibble Mode DRAM, 1MX1, 100ns, CMOS, PZIP19, PLASTIC, ZIP-20/19 | Nibble Mode DRAM, 1MX1, 80ns, CMOS, PZIP19, PLASTIC, ZIP-20/19 | Nibble Mode DRAM, 1MX1, 80ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 | Nibble Mode DRAM, 1MX1, 60ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 | Nibble Mode DRAM, 1MX1, 60ns, CMOS, PZIP19, PLASTIC, ZIP-20/19 | Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 | Nibble Mode DRAM, 1MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18 | Nibble Mode DRAM, 1MX1, 60ns, CMOS, PDIP18, PLASTIC, DIP-18 | Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDIP18, PLASTIC, DIP-18 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
零件包装代码 | SOJ | ZIP | ZIP | SOJ | SOJ | ZIP | SOJ | DIP | DIP | DIP |
包装说明 | SOJ, SOJ20/26,.34 | ZIP, ZIP20,.1 | ZIP, ZIP20,.1 | SOJ, SOJ20/26,.34 | SOJ, SOJ20/26,.34 | ZIP, ZIP20,.1 | SOJ, SOJ20/26,.34 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 |
针数 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 18 | 18 | 18 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE | NIBBLE |
最长访问时间 | 100 ns | 100 ns | 80 ns | 80 ns | 60 ns | 60 ns | 70 ns | 100 ns | 60 ns | 70 ns |
其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
JESD-30 代码 | R-PDSO-J20 | R-PZIP-T19 | R-PZIP-T19 | R-PDSO-J20 | R-PDSO-J20 | R-PZIP-T19 | R-PDSO-J20 | R-PDIP-T18 | R-PDIP-T18 | R-PDIP-T18 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 17.145 mm | 26.165 mm | 26.165 mm | 17.145 mm | 17.145 mm | 26.165 mm | 17.145 mm | 22.02 mm | 22.02 mm | 22.02 mm |
内存密度 | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bi | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM |
内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 20 | 19 | 19 | 20 | 20 | 19 | 20 | 18 | 18 | 18 |
字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 | 1MX1 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | SOJ | ZIP | ZIP | SOJ | SOJ | ZIP | SOJ | DIP | DIP | DIP |
封装等效代码 | SOJ20/26,.34 | ZIP20,.1 | ZIP20,.1 | SOJ20/26,.34 | SOJ20/26,.34 | ZIP20,.1 | SOJ20/26,.34 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 512 | 512 | 512 | 512 | 512 | 512 | 512 | 512 | 512 | 512 |
座面最大高度 | 3.68 mm | 10.16 mm | 10.16 mm | 3.68 mm | 3.68 mm | 10.16 mm | 3.68 mm | 4.65 mm | 4.65 mm | 4.65 mm |
最大待机电流 | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
最大压摆率 | 0.065 mA | 0.065 mA | 0.075 mA | 0.075 mA | 0.095 mA | 0.095 mA | 0.085 mA | 0.065 mA | 0.095 mA | 0.085 mA |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | NO | NO | YES | YES | NO | YES | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND | J BEND | THROUGH-HOLE | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | ZIG-ZAG | ZIG-ZAG | DUAL | DUAL | ZIG-ZAG | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 7.62 mm | 2.96 mm | 2.96 mm | 7.62 mm | 7.62 mm | 2.96 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved