REVISIONS
LTR
A
B
C
DESCRIPTION
Changes in accordance with NOR 5962-R039-96
DATE (YR-MO-DA)
96-01-30
APPROVED
Monica L. Poelking
Changes in accordance with NOR 5962-R060-97
Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial
changes throughout. - tmh
96-11-21
00-08-14
Monica L. Poelking
Monica L. Poelking
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
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15
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REV
SHEET
PREPARED BY
Joseph A. Kerby
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1
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23
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STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Thanh V. Nguyen
APPROVED BY
Thomas M. Hess
DRAWING APPROVAL DATE
95-08-31
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
MICROCIRCUIT, DIGITAL, RADIATION
HARDENED, HIGH SPEED CMOS, 8-BIT SERIAL-
IN/PARALLEL-OUT SHIFT REGISTER, TTL
COMPATIBLE INPUTS, MONOLITHIC SILICON
SIZE
A
SHEET
CAGE CODE
AMSC N/A
REVISION LEVEL
C
67268
1 OF
23
5962-95663
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E385-00
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
95663
01
V
X
C
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
\/
Drawing number
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
HCTS164
Circuit function
Radiation hardened SOS, high speed CMOS,
8-bit serial-in/parallel-out shift register,
TTL compatible inputs
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
X
Descriptive designator
CDIP2-T14
CDFP3-F14
Terminals
14
14
Package style
dual-in-line package
flat package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95663
SHEET
C
2
1.3 Absolute maximum ratings. 1/ 2/ 3/
Supply voltage range (V
CC
) .................................................................................
DC input voltage range (V
IN
) ...............................................................................
DC output voltage range (V
OUT
) ..........................................................................
DC input current, any one input (I
IN
) ...................................................................
DC output current, any one output (I
OUT
) ............................................................
Storage temperature range (T
STG
) ......................................................................
Lead temperature (soldering, 10 seconds) .........................................................
Thermal resistance, junction-to-case (θ
JC
):
Case outline C ..................................................................................................
Case outline X ..................................................................................................
Thermal resistance, junction-to-ambient (θ
JA
):
Case outline C ..................................................................................................
Case outline X ..................................................................................................
Junction temperature (T
J
) ...................................................................................
Maximum package power dissipation at T
A
= +125°C (P
D
): 4/
Case outline C ..................................................................................................
Case outline X ..................................................................................................
1.4 Recommended operating conditions. 2/ 3/
Supply voltage range (V
CC
) .................................................................................
Input voltage range (V
IN
) .....................................................................................
Output voltage range (V
OUT
) ...............................................................................
Maximum low level input voltage (V
IL
).................................................................
Minimum high level input voltage (V
IH
)................................................................
Case operating temperature range (T
C
)..............................................................
Maximum input rise and fall time at V
CC
= 4.5 V (t
r
, t
f
) ........................................
Radiation features:
Total dose........................................................................................................
Single event phenomenon (SEP) effective
linear energy threshold (LET) no upsets (see 4.4.4.4) ..................................
Dose rate upset (20 ns pulse) .........................................................................
Latch-up ..........................................................................................................
Dose rate survivability .....................................................................................
2. APPLICABLE DOCUMENTS
-0.5 V dc to +7.0 V dc
-0.5 V dc to V
CC
+ 0.5 V dc
-0.5 V dc to V
CC
+ 0.5 V dc
±10 mA
±25 mA
-65°C to +150°C
+265°C
24°C/W
30°C/W
74°C/W
116°C/W
+175°C
0.66 W
0.43 W
+4.5 V dc to +5.5 V dc
+0.0 V dc to V
CC
+0.0 V dc to V
CC
0.8 V
V
CC
/2
-55°C to +125°C
100 ns/V
> 2 x 10 Rads (Si)
> 100 MeV/(cm /mg) 5/
10
> 1 x 10 Rads (Si)/s 5/
None 5/
12
> 1 x 10 Rads (Si)/s 5/
2
5
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
1/
2/
3/
4/
5/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Unless otherwise specified, all voltages are referenced to GND.
The limits for the parameters specified herein shall apply over the full specified V
CC
range and case temperature range of -
55°C to +125°C unless otherwise noted.
If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is
based on
θ
JA
) at the following rate:
Case C .......................................................................................................................... 13.5 mW/°C
Case X .......................................................................................................................... 8.6 mW/°C
Guaranteed by design or process but not tested.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95663
SHEET
C
3
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-973 -
MIL-STD-1835 -
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings (SMD's).
Standard Microcircuit Drawings.
Test Method Standard Microcircuits.
Configuration Management.
Interface Standard For Microcircuit Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3.
3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4.
3.2.6 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95663
SHEET
C
4
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in
MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered
to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 40 (see MIL-PRF-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1015.
(2) T
A
= +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
Interim and final electrical test parameters shall be as specified in table IIA herein.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
b.
c.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95663
SHEET
C
5
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