TB100
TO
-92
NPN power transistor
19 December 2013
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO92) plastic package intended for use in low power SMPS emitter switching circuits.
2. Features and benefits
•
•
•
•
Fast switching
High base current drive capability
High voltage capability
Very low switching and conduction losses
3. Applications
•
•
•
•
Emitter-switched low power SMPS circuits
Self Oscillating Power Supplies
AC-DC converters
DC-AC inverters
4. Quick reference data
Table 1.
Symbol
I
C
P
tot
T
j
V
CESM
Quick reference data
Parameter
collector current
total power dissipation
junction temperature
collector-emitter peak
voltage
DC current gain
V
BE
= 0 V
Conditions
DC
T
lead
≤ 25 °C;
Fig. 1
Min
-
-
-
-
Typ
-
-
-
-
Max
1
2
150
700
Unit
A
W
°C
V
Static characteristics
h
FE
V
CE
= 5 V; I
C
= 10 mA; T
lead
= 25 °C;
Fig. 5; Fig. 6
V
CE
= 5 V; I
C
= 100 mA; T
lead
= 25 °C;
Fig. 5; Fig. 6
V
CE
= 5 V; I
C
= 0.75 A; T
lead
= 25 °C;
Fig. 5; Fig. 6
12
15.5
20
14
24
34
12
22
32
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NXP Semiconductors
TB100
NPN power transistor
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
E
C
B
emitter
collector
base
321
Simplified outline
Graphic symbol
C
B
E
sym123
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
TB100
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
7. Marking
Table 4.
TB100
Marking codes
Marking code
TB100
Type number
TB100
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© NXP N.V. 2013. All rights reserved
Product data sheet
19 December 2013
2 / 10
NXP Semiconductors
TB100
NPN power transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
collector-emitter peak voltage
collector-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
100
003aae614
Conditions
V
BE
= 0 V
I
E
= 0 A
DC
Min
-
-
-
-
-
-
Max
700
700
1
2
0.5
3
2
150
150
Unit
V
V
A
A
A
A
W
°C
°C
T
lead
≤ 25 °C;
Fig. 1
-
-65
-
P
der
(%)
80
60
40
20
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a function of mounting base temperature
TB100
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© NXP N.V. 2013. All rights reserved
Product data sheet
19 December 2013
3 / 10
NXP Semiconductors
TB100
NPN power transistor
9. Thermal characteristics
Table 6.
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to lead
thermal resistance
from junction to
ambient
10
2
Z
th(j-lead)
(K/W)
10
Conditions
Min
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
printed circuit board mounted; lead
length = 4 mm;
Fig. 2
-
aaa-010123
1
P
d=
t
p
T
10
-1
t
p
t
T
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 2.
Transient thermal impedance from junction to lead as a function of pulse width
TB100
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© NXP N.V. 2013. All rights reserved
Product data sheet
19 December 2013
4 / 10
NXP Semiconductors
TB100
NPN power transistor
10. Characteristics
Table 7.
Symbol
I
CES
Characteristics
Parameter
Conditions
Min
-
-
-
-
-
12
14
12
Typ
0.8
2
0.05
0.24
0.93
22
24
15.5
Max
100
500
100
1
1.3
32
34
20
Unit
µA
µA
µA
V
V
Static characteristics
collector-emitter cut-off V
BE
= 0 V; V
CE
= 700 V; T
lead
= 25 °C
current
V
BE
= 0 V; V
CE
= 700 V; T
j
= 125 °C
emitter-base cut-off
current
collector-emitter
saturation voltage
V
EB
= 9 V; I
C
= 0 A; T
lead
= 25 °C
I
C
= 0.75 A; I
B
= 0.15 A; T
lead
= 25 °C;
Fig. 3
I
EBO
V
CEsat
V
BEsat
h
FE
base-emitter saturation I
C
= 0.75 A; I
B
= 0.15 A; T
lead
= 25 °C;
voltage
Fig. 4
DC current gain
I
C
= 10 mA; V
CE
= 5 V; T
lead
= 25 °C;
Fig. 5; Fig. 6
I
C
= 100 mA; V
CE
= 5 V; T
lead
= 25 °C;
Fig. 5; Fig. 6
I
C
= 0.75 A; V
CE
= 5 V; T
lead
= 25 °C;
Fig. 5; Fig. 6
Dynamic characteristics (resistive load)
t
s
t
f
storage time
fall time
I
C
= 1 A; I
Bon
= 0.2 A; I
Boff
= -0.2 A;
R
L
= 75 Ω; V
BB
= -4 V; T
lead
= 25 °C;
Fig. 7; Fig. 8
aaa-010122
-
-
2
320
-
-
µs
ns
2.0
V
CEsat
(V)
1.6
V
BEsat
(V)
1.4
1.2
1.0
0.8
T
j
= -35 °C
T
j
= 25 °C
1.6
aaa-010121
1.2
0.8
I
C
/ I
B
= 5
T
j
= 125 °C
T
j
= 25 °C
T
j
= -35 °C
0.6
0.4
0.2
I
C
/ I
B
= 5
T
j
= 125 °C
0.4
0
10
-2
10
-1
1
I
C
(A)
10
0
10
-2
10
-1
1
I
C
(A)
10
Fig. 3.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 4.
Base-emitter saturation voltage as a function of
collector current; typical values
TB100
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
19 December 2013
5 / 10
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