LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69
5.31
1.49
2.49
(0.185)
(0.209)
(0.059)
(0.098)
6.15
(0.242)
BSC
15.49 (0.610)
16.26 (0.640)
SEME
BFC50
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
20.80 (0.819)
21.46 (0.845)
3.55 (0.140)
3.81 (0.150)
4.50
(0.177)
M ax.
1
2
3
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
0.40 (0.016)
0.79 (0.031)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
V
DSS
I
D(cont)
R
DS(on)
500V
23.0A
Ω
0.25Ω
Terminal 1
Gate
Terminal 3
Source
19.81 (0.780)
20.32 (0.800)
Terminal 2
Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
500
23
92
±30
310
–55 to 150
300
V
A
A
V
W
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
23
0.25
Min.
500
Typ.
Max. Unit
V
250
1000
±100
4
µA
nA
V
A
Ω
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 8/95
LAB
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.8Ω
Min.
Typ.
2380
522
196
83
12.6
51
14
27
61
36
Max. Unit
2950
730
290
130
19
76
28
55
92
71
ns
nC
pF
SEME
BFC50
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/µs
160
2.7
320
5.5
Min.
Typ.
Max. Unit
23
A
92
1.3
640
11
V
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
Test Conditions
V
DS
= 0.4V
DSS
, t = 1 Sec.
I
DS
= P
D
/ 0.4V
DSS
V
DS
= P
D
/ I
D
[Cont.]
I
DS
= I
D
[Cont.] , t = 1 Sec.
Min.
310
Typ.
Max. Unit
W
SOA2
I
LM
Safe Operating Area
Inductive Current Clamped
310
92
W
A
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
0.40
°C/W
40
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 8/95
LAB
Figure 1
MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE,
JUNCTION – CASE vs PULSE DURATION
Z
θJC
Thermal Impedance (°C/W)
SEME
BFC50
Rectangular Pulse Duration (s)
Figure 2
TYPICAL OUTPUT CHARACTERISTICS
Figure 3
TYPICAL OUTPUT CHARACTERISTICS
I
D
Drain Current (A)
I
D
Drain Current (A)
V
DS
Drain – Source Voltage (V)
V
DS
Drain – Source Voltage (V)
Figure 4
TYPICAL TRANSFER CHARACTERISTICS
R
DS(ON)
Drain – Source On–Resistance
(Normalised)
V
GS
Gate – Source Voltage (V)
Figure 5
R
DS(ON)
vs DRAIN CURRENT
I
D
Drain Current (A)
I
D
Drain Current (A)
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 8/95
LAB
Figure 6
MAXIMUM DRAIN CURRENT vs
CASE TEMPERATURE
Figure 7
BREAKDOWN VOLTAGE vs TEMPERATURE
BV
DSS
Drain – Source Breakdown
Voltage (Normalised)
I
D
Drain Current (A)
SEME
BFC50
T
C
Case Temperature (°C)
T
J
Junction Temperature (°C)
Figure 8
ON RESISTANCE vs TEMPERATURE
R
DS(ON)
Drain – Source On–Resistance
(Normalised)
Figure 9
THRESHOLD VOLTAGE vs TEMPERATURE
V
GS(TH)
Threshold Voltage (V)
(Normalised)
T
J
Junction Temperature (°C)
T
C
Case Temperature (°C)
Figure 10
MAXIMUM SAFE OPERATING AREA
Figure 11
TYPICAL CAPACITANCE vs
DRAIN – SOURCE VOLTAGE
I
D
Drain Current (A)
V
DS
Drain – Source Voltage (V)
C Capacitance (pF)
V
DS
Drain – Source Voltage (V)
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 8/95
LAB
Figure 12
GATE CHARGES vs GATE – SOURCE VOLTAGE
BV
DSS
Drain – Source Breakdown
Voltage (Normalised)
V
GS
Gate – Source Voltage (V)
SEME
BFC50
Figure 13
TYPICAL SOURCE – DRAIN
DIODE FORWARD VOLTAGE
Q
g
Total Gate Charge (nC)
T
J
Junction Temperature (°C)
Semelab plc.
Telephone (0455) 556565. Telex: 341927. Fax (0455) 552612.
Prelim. 8/95
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