SURMOUNT Low Barrier Silicon
Schottky Diodes: Ring Quad
TM
V 1.00
MA4E2532L-1113
Features
Extremely Low Parasitic Capitance and Inductance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
n
Rugged HMIC Construction with Polyimide Scratch
Protection
n
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300
°
C, 16 hours)
n
Lower Susceptibility to ESD Damage
n
n
Case Style 1113
A
B
Description
The MA4E2532L-1113 SurMount
TM
Low Barrier, Silicon
Schottky Ring Quad Diodes are fabricated with the patented
Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which form diodes
or via conductors embedded in a glass dielectric, which acts as
the low dispersion, low loss, microstrip transmission medium.
The combination of silicon and glass allows HMIC devices to
have excellent loss and power dissipation characteristics in a
low profile, reliable device.
D
E
D
C
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300
°C.
The “ 0505 ” outline allows for Surface Mount placement and
multi-functional polarity orientations.
Inches
Millimeters
Dim
A
B
C
D Sq.
E
Min.
0.0445
0.0445
0.0040
0.0128
0.0128
Max.
0.0465
0.0465
0.0080
0.0148
0.0148
Min.
1.130
1.130
0.102
0.325
0.325
Max.
1.180
1.180
0.203
0.375
0.375
Equivalent Circuit
Applications
The MA4E2532L-1113 SurMount
TM
Low Barrier, Silicon
Schottky Ring Quad Diodes are recommended for use in
microwave circuits through Ku band frequencies for lower
power applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction facilitates the
direct replacement of more fragile beam lead diodes with the
corresponding Surmount diode, which can be connected to a
hard or soft substrate circuit with solder.
1
SurMount
TM
Low Barrier Silicon Schottky Diodes: Ring Quad
MA4E2532L-1113
V 1.00
Electrical Specifications: @ 25 °C (Measured as Single Diodes)
Model
Number
MA4E2532L-1113
Type
Recommended
Frequency Range
DC - 18 GHz
Vf @ 1 mA
( mV )
330 Max
300 Typ
Ct @ 0 V
( pF )
0.16 Max
0.10 Typ
Rt Slope Resistance
( Vf1 - Vf2 )/(10.5 mA-9.5 mA )
(
Ω
)
16 Typ
20 Max
Low
Barrier
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the
Ohmic Resistance
Max Forward Voltage Difference
∆Vf
@ 1 mA: 10 mV
Handling
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
The rugged construction of these SurMount devices allows the
use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky junctions.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Die Bonding
Die attach for these devices is made simple through the use
of surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these
devices, and are opposite the active junction. The devices
are well suited for higher temperature solder attachment
onto hard substrates. 80Au/20Sn and Sn63/Pb37/Ag2
solders are acceptable for usage.
For Hard substrates, we recommend utilizing a vacuum tip
and force of 60 to 100 grams applied uniformly to the top
surface of the device, using a hot gas bonder with equal
heat applied across the bottom mounting pads of the device.
When soldering to soft substrates, it is recommended to use
a lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are aligned with
the circuit board mounting pads. Reflow the solder paste by
applying Equal heat to the circuit at both die-mounting
pads. The solder joint must Not be made one at a time,
creating un-equal heat flow and thermal stress. Solder
reflow should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be visually
inspected through the die after die attach is completed.
Absolute Maximum Ratings
1
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
RF C.W. Incident Power
RF & DC Dissipated Power
Value
-40 °C to +150 °C
-40 °C to +150 °C
20 mA
5V
+ 20 dBm
50 mW
1. Exceeding any of these values may result in permanent
damage
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
SurMount
TM
Low Barrier Silicon Schottky Diodes: Ring Quad
MA4E2532L-1113
V 1.00
MA4E2532L-1113 Low Barrier SPICE PARAMETERS (per Diode)*
Is
(nA)
26
Rs
(
Ω
)
12.8
N
1.20
Cj0
( pF )
1.0 E-2
M
0.5
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
0.5
BV
(V)
5.0
IBV
(mA)
1.0 E-2
* Spice parameters (per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.020
0.020
0.013
0.013
0.020
0.020
Ordering Information
Part Number
MA4E2532L-1113W
MA4E2532L-1113
MA4E2532L-1113T
Package
Wafer on Frame
Die in Carrier
Tape/Reel
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
SurMount
TM
Low Barrier Silicon Schottky Diodes: Ring Quad
MA4E2532L-1113
V 1.00
MA4E2532L-1113 Schematic Per Diode
Ct
Ls
Rs
Rj
Schematic Values per Diode
Model
Number
MA4E2532L-1113
Ls (nH)
0.8
Rs (
Ω
)
13.4
Rj (
Ω
)
26 / Idc
Ct ( pF )
0.10
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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