Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
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Features
•
•
•
•
•
•
•
•
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•
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Up to 30MHz operation
Fundamental oscillation
Capacitors 8pF C
G
and 10pF C
D
built-in
(except A2A, A4A series)
Inverter amplifier feedback resistor built-in
TTL input level
8 mA (V
DD
= 4.5 V) drive capability
4 mA (V
DD
= 2.7 V) drive capability
Output three-state function
2.7 to 5.5 V supply voltage (AxA series)
4.5 to 5.5 V supply voltage (BxA series)
Clock output (f
O
, f
O
/2, f
O
/4, f
O
/8 determined by
internal connection, f
O
is oscillator frequency)
6-Pin SOT23 package
Description
The PT7C5022 series are crystal oscillator module
ICs that incorporate high-frequency, low current
consumption oscillator and output buffer circuits.
Feedback resistors and high-frequency capacitors are
built-in, eliminating the need for external components to
make a stable fundamental-harmonic oscillator.
Ordering Information
Part No.
PT7C5022AxATA
PT7C5022AxATAE
PT7C5022BxATA
Package
SOT23-6
Lead free
SOT23-6
SOT23-6
Lead free
SOT23-6
Operating
Range
Industrial
Industrial
Industrial
Industrial
Application
Used for crystal oscillate
PT7C5022BxATAE
Note:
Below is the detailed definition of part no.
PT7C
Device Type
Clock series
XO 5022 Series
Serial Type
Series
AxA
BxA
V
DD
range
(V)
2.7~5.5
4.5~5.5
5022
A
1
A
TA
T
Package
T:
TA:
SOT23-6
DE: die form
Output frequency and build-in capacitance
Suffix f
output
(V)
1
2
3
4
5
7
f
O
f
O
f
O
/2
f
O
/2
f
O
/4
f
O
/8
Build-in C (pF)
8, 10
-
8, 10
-
8, 10
Series
BxA
AxA
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Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
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Series configuration
Built-in capacitance
(pF)
C
G
PT7C5022A1A
PT7C5022A2A
PT7C5022A3A
AxA
PT7C5022A4A
PT7C5022A5A
PT7C5022A7A
BxA
PT7C5022B1A
f
o
/2
f
o
/4
8
f
o
/8
f
o
8
10
-
4~30
4.5 ~ 5.5
TTL
10
-
-
4~30
4~30
f
o
f
o
f
o
/2
8
-
8
C
D
10
4~24
-
10
2.7 ~ 5.5
CMOS
High
impedance
4~30
Recommended
operating freq.
(MHz)
3V V
DD
5V V
DD
Series
Part No.
Output
freq.
V
DD
(V)
Output
level
Standby output
state
g
m
ratio is 1; feedback resistor R
f
is 600Ω.
Block Diagram
Function Description
When INH goes LOW, the output on Q becomes high impedance
INH
HIGH (or open)
Low
Q
Any f
O
, f
O
/2, f
O
/4, f
O
/8 output frequency
High impedance
Oscillator
Normal operation
Stopped
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Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
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Pin Information
Pin Configuration
PT7C5022xxxT
PT7C5022xxx
1
INH
XT
6
2
XT
VDD
5
3
GND
Q
4
SOT23-6 package
Pin Description
Pin
1
2
3
4
5
6
Sym
INH
XT
GND
Q
V
DD
XT
Type
I
I
P
O
P
O
Description
Output state control input. High impedance when LOW. Pull-up resistor built in.
Amplifier input.
Ground.
Output. Output frequency (fo, fo /2, fo /4, fo /8) determined by internal connection, fo is
oscillator frequency.
Supply voltage.
Amplifier output.
Crystal oscillator connected between XT and XT.
Crystal oscillator connected between XT and XT.
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Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
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Maximum Ratings
Storage Temperature (die form)......................................................- 65oC to +150oC
Storage Temperature (package form) .........................................- 55oC to +125oC
Ambient Temperature with Power Applied................................................- 40oC to +85oC
Supply Voltage to Ground Potential (V
DD
to GND ..................- 0.5V to 7.0V
DC Input (All Other Inputs except V
DD
& GND) ..-0.5V to V
DD
+0.5V
DC Output Current........................................................................ 13mA
Power Dissipation.........................................................................250mW (package form)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other condi-tions above those indicated in
the operational sec-tions of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods may
affect reliability.
Recommended Operating Conditions
3 V operation: AxA series
f
≤30MHz,
C
L
≤15pF
Parameter
Supply voltage
Input voltage
Operating temperature
Sym
V
DD
V
IN
T
OPR
Conditions
-
-
-
Min
2.7
GND
-20
Typ
-
-
-
Max
3.6
V
DD
80
Unit
V
V
°C
5 V operation: AxA series, BxA series
f
≤30MHz,
C
L
≤15pF
Parameter
Supply voltage
Input voltage
Operating temperature
Sym
V
DD
V
IN
T
OPR
Conditions
-
-
-
Min
4.5
GND
-20
Typ
-
-
-
Max
5.5
V
DD
80
Unit
V
V
°C
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Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation: AxA series
V
DD
= 2.7 to 3.6V, T
A
= -20 to 80°C, unless otherwise noted.
Sym.
I
DD
Parameter
Current consumption
Condition
INH = open, Measurement cct 3, load cct 1, C
L
= 15 pF, 30
MHz cr ystal oscillator
INH pin
INH pin
Measurement cct 4
Measurement cct 5
Design value,
determined by the
internal wafer pattern
PT7C5022A1A, PT7C5022A3A,
PT7C5022A5A, PT7C5022A7A
Min
-
2.0
-
25
200
7.44
9.3
2.1
-
-
-
Typ
4
-
-
100
600
8
10
2.4
0.3
-
-
Max
7
-
0.5
250
1000
8.56
Unit
mA
V
V
kΩ
kΩ
V
IH
High level input voltage
V
IL
R
UP
R
f
C
G
Built-in capacitance
C
D
V
OH
V
OL
High level output
voltage
Low level output
voltage
Low level input voltage
INH pull-up resistance
Feedback resistance
pF
10.7
-
0.4
10
µA
10
V
V
Q: Measurement cct 1, I
OH
= 4mA
Q: Measurement cct 2, I
OL
= 4mA
V
OH
= V
DD
V
OL
= GND
I
Z
Q: Measurement cct 2, V
DD
= 3.6V, V
INH
Output leakage current
= LOW
5V operation: AxA series/BxA series
V
DD
= 4.5 to 5.5 V, T
A
= -20 to 80°C, unless otherwise noted.
Sym.
I
DD
Parameter
Current consumption
Condition
INH = open, Measurement
cct 3, C
L
= 15 pF, 30MHz
crystal
Load cct 1 PT7C5022AxA
Load cct 2 PT7C5022BxA
Min
-
-
2.0
-
25
200
7.44
9.3
3.9
-
-
-
Typ
7
7
-
-
100
600
8
10
4.2
0.3
-
-
Max
12
Unit
mA
12
-
0.8
250
1000
8.56
pF
10.7
-
0.4
10
µA
10
Ver: 1
V
V
V
V
kΩ
kΩ
V
IH
V
IL
R
UP
R
f
C
G
High level input voltage
Low level input voltage
INH pull-up resistance
Feedback resistance
INH
INH
Measurement cct 4
Measurement cct 5
Design value,
determined by the
internal wafer pattern
PT7C5022A1A, PT7C5022A3A,
PT7C5022A5A, PT7C5022A7A,
PT7C5022B1A
Built-in capacitance
C
D
V
OH
V
OL
High level output
voltage
Low level output
voltage
Output leakage current
Q: Measurement cct 1, I
OH
= 8 mA
Q: Measurement cct 1, I
OL
= 8 mA
V
OH
= V
DD
I
Z
Q: Measurement cct 2, INH=LOW
V
OL
= GND
PT0193(06/05)
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51单片机
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