e
PTB 20187
4 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
4 Watts, 1.80–2.00 GHz
Class AB Characteristics
30% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
6
Output Power (Watts)
5
4
201
87
LO
TC
OD
E
V
CC
= 26 V
3
I
CQ
= 50 mA
f = 1.8-2.0 GHz
2
0.0
0.2
0.4
0.6
0.8
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CES
V
EBO
I
C
P
D
Value
50
50
4.0
1.0
19.7
0.112
–40 to +150
8.9
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20187
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 10 mA
V
BE
= 0 V, I
C
= 10 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 50 mA
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
20
50
4
20
Typ
—
—
5
40
Max
—
—
—
—
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 2.00 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 2.00 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 2.00 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA,
f = 2.00 GHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
η
C
Ψ
Min
8
4
30
—
Typ
10
6
—
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 4 W, I
CQ
= 50 mA)
Z Source
Z Load
Frequency
GHz
1.80
1.90
2.00
R
Z Source
jX
-7.50
-6.16
-3.55
R
11.49
7.23
4.41
Z Load
jX
-10.15
-6.29
-1.34
14.49
12.30
10.00
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98
2
5/19/98
嵌入式系统
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