DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D031
PTB23003X
NPN microwave power transistor
Product specification
Supersedes data of 1997 Feb 19
1997 Nov 13
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
•
Interdigitated structure provides high emitter efficiency
•
Multicell geometry gives good balance of dissipated
power and low thermal resistance
•
Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
3
PTB23003X
PINNING - SOT440A
PIN
1
2
3
collector
emitter
base; connected to flange
DESCRIPTION
olumns
1
c
b
e
MAM131
DESCRIPTION
Top view
2
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
Marking code:
2303X.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common-base class B circuit.
MODE OF
OPERATION
CW
f
(GHz)
2
V
CC
(V)
24
P
L
(W)
≥3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
G
po
(dB)
≥8.75
η
C
(%)
≥45
Z
i
(Ω)
2.5 + j14
Z
L
(Ω)
8 + j6
1997 Nov 13
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.3 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
t
≤
10 s; note 1
T
mb
= 75
°C;
f > 1 MHz
CONDITIONS
open emitter
open base
R
BE
= 0
−
−
−
−
−
−65
−
−
MIN.
PTB23003X
MAX.
40
15
40
0.5
7.6
+200
200
235
V
V
V
A
UNIT
W
°C
°C
°C
handbook, halfpage
10
MLC092
Ptot
(W)
5
0
50
0
50
100
150
200
Tmb (
o
C)
f > 1 MHz.
Fig.2
Power derating curve.
1997 Nov 13
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. See “Mounting
recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
I
CBO
I
EBO
C
cb
C
ce
PARAMETER
collector-base breakdown voltage
collector cut-off current
emitter cut-off current
collector-base capacitance
collector-emitter capacitance
CONDITIONS
I
C
= 2 mA; I
E
= 0
V
CE
= 24 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
MIN.
40
40
−
−
−
−
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
T
j
= 75
°C
T
j
= 75
°C;
note 1
PTB23003X
MAX.
12
0.7
UNIT
K/W
K/W
TYP.
−
−
−
−
3
0.6
MAX.
−
−
20
0.4
−
−
UNIT
V
V
µA
µA
pF
pF
collector-emitter breakdown voltage I
C
= 10 mA; R
BE
= 0
1997 Nov 13
4
Philips Semiconductors
Product specification
NPN microwave power transistor
APPLICATION INFORMATION
Microwave performance in a common-base class B selective amplifier circuit; see note 1.
MODE OF OPERATION
Class B (CW)
Note
f
(GHz)
2
V
CC
(V)
24
P
L
(W)
>3; typ. 4
G
po
(dB)
PTB23003X
η
C
(%)
>45; typ. 50
>8.75; typ. 10
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
handbook, full pagewidth
3.6
input
3.6
,,,,,,,
,,,,,,,,,,,,,,,
,,,,,,,
,
,,,,,,,,,,,,,,,,
,,,
,,
,,,,,,,,,,
,,,,,,,,,,,
,
,,,,,,,
3.2
2.5
3.5
3.5
15
3.2
2
0.4
0.5
7.8
2
8
3
3.2
100 pF
ATC
1.5
5
12.7
12
7.3
3
3.2
6
4
5
30
30
MSA103
output
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity:
ε
r
= 2.55.
Substrate: circuits on a double copper clad printed-circuit board Teflon fibreglass dielectric.
Fig.3 Prematching test circuit board.
1997 Nov 13
5
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