DISCRETE SEMICONDUCTORS
DATA SHEET
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistors
FEATURES
•
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
•
Interdigitated structure provides high emitter efficiency
•
Multicell geometry gives good balance of dissipated
power and low thermal resistance
•
Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
DESCRIPTION
olumns
PTB32001X; PTB32003X;
PTB32005X
PINNING - SOT440A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
1
c
b
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
Top view
3
2
MAM131
e
MARKING
TYPE NUMBER
PTB32001X
PTB32003X
PTB32005X
MARKING CODE
3201X
3203X
3205X
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common-base class B circuit.
TYPE NUMBER
PTB32001X
PTB32003X
PTB32005X
MODE OF
OPERATION
CW
CW
CW
3
3
3
f
(GHz)
24
24
24
V
CC
(V)
P
L
(W)
≥1.3
≥2.5
≥4.5
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
≥8
≥8
≥8
G
po
(dB)
η
C
(%)
≥35
≥35
≥35
Z
i
(Ω)
15 + j31
5.5 + j29
2.8 + j20
Z
L
(Ω)
5.5 + j10
5
−
j2.2
4
−
j7
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
PTB32001X
PTB32003X
PTB32005X
P
tot
total power dissipation
PTB32001X
PTB32003X
PTB32005X
T
stg
T
j
T
sld
Note
1. Up to 0.3 mm from ceramic.
storage temperature range
operating junction temperature
soldering temperature
t
≤
10 s; note 1
PTB32001X; PTB32003X;
PTB32005X
CONDITIONS
open emitter
open base
R
BE
= 0
Ω
open collector
−
−
−
−
−
−
−
T
mb
≤
75
°C;
f > 1 MHz
−
−
−
MIN.
MAX.
40
15
40
3.0
0.25
0.5
0.75
4.2
7.6
8.7
+200
200
235
V
V
V
V
A
A
A
UNIT
W
W
W
°C
°C
°C
−65
−
−
handbook, halfpage
6
MLC091
handbook, halfpage
10
MLC092
Ptot
(W)
Ptot
(W)
4
5
2
0
−50
0
0
50
100
150
200
Tmb (
o
C)
50
0
50
100
150
200
Tmb (
o
C)
f > 1 MHz.
f > 1 MHz.
Fig.2
Power derating curve; PTB32001X.
Fig.3
Power derating curve; PTB32003X.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X;
PTB32005X
handbook, halfpage
10
MLC093
Ptot
(W)
5
0
−50
0
50
100
150
200
Tmb (
o
C)
f > 1 MHz.
Fig.4
Power derating curve; PTB32005X.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PTB32001X
PTB32003X
PTB32005X
R
th mb-h
Note
1. See
“Mounting recommendations in the General part of handbook SC19a”.
thermal resistance from mounting base to heatsink
T
j
= 75
°C;
note 1
PARAMETER
thermal resistance from junction to mounting base
CONDITIONS
T
j
= 75
°C
22
12
10.5
0.7
K/W
K/W
K/W
K/W
MAX.
UNIT
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistors
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
PARAMETER
collector-base breakdown voltage
PTB32001X
PTB32003X
PTB32005X
V
(BR)CES
I
CBO
collector cut-off current
PTB32001X
PTB32003X
PTB32005X
I
EBO
emitter cut-off current
PTB32001X
PTB32003X
PTB32005X
C
cb
collector-base capacitance
PTB32001X
PTB32003X
PTB32005X
C
ce
collector-emitter capacitance
PTB32001X
PTB32003X
PTB32005X
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
I
E
= I
C
= 0; V
CB
= 24 V;
V
EB
= 1.5 V; f = 1 MHz
V
EB
= 1.5 V; I
C
= 0
V
EB
= 1.5 V; I
C
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 24 V; I
E
= 0
V
CE
= 24 V; I
E
= 0
V
CE
= 24 V; I
E
= 0
I
C
= 1 mA; I
E
= 0
I
C
= 2 mA; I
E
= 0
I
C
= 3 mA; I
E
= 0
CONDITIONS
PTB32001X; PTB32003X;
PTB32005X
MIN.
40
40
40
40
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
2.2
3
3.8
MAX.
−
−
−
−
10
20
30
0.2
0.4
0.6
−
−
−
UNIT
V
V
V
V
µA
µA
µA
µA
µA
µA
pF
pF
pF
collector-emitter breakdown voltage I
C
= 10 mA; R
BE
= 0
Ω
−
−
−
0.3
0.6
0.9
−
−
−
pF
pF
pF
APPLICATION INFORMATION
Microwave performance in a common-base class B selective amplifier circuit; see note 1.
MODE OF
OPERATION
Class B (CW)
TYPE NUMBER
PTB32001X
PTB32003X
PTB32005X
Note
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
3
3
3
f
(GHz)
24
24
24
V
CC
(V)
P
L
(W)
>1.3; typ. 1.8
>2.5; typ. 3.0
>4.5; typ. 5.5
G
po
(dB)
>8; typ. 9.5
>8; typ. 9.5
>8; typ. 9.5
η
C
(%)
>35; typ. 45
>35; typ. 45
>35; typ. 45
1997 Feb 18
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
