SILICON MMIC LOW
CURRENT AMPLIFIER UPC8179TK
FOR MOBILE COMMUNICATIONS
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm)
• SUPPLY VOLTAGE:
V
CC
= 2.4 to 3.3 V
• HIGH EFFICIENCY:
P
O
(1dB) = +2.0 dBm TYP at f = 1.0 GHz
P
O
(1dB) = +0.5 dBm TYP at f = 1.9 GHz
P
O
(1dB) = +0.5 dBm TYP at f = 2.4 GHz
• POWER GAIN:
G
P
= 13.5 dB TYP at f = 1.0 GHz
G
P
= 15.5 dB TYP at f = 1.9 GHz
G
P
= 16.0 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 43 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 42 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
I
CC
= 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
0.1 to 2.4 GHz (Output port LC matching)
• LIGHT WEIGHT:
3 mg
Top
View
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TK
1.3±0.05
1.1±0.1
0.1
Bottom
View
0.16±0.05
1.5±0.1
0.96
0.48
0.48
0.2±0.1
(0.9)
0.55±0.03
0.11±
+0.1
-0.05
DESCRIPTION
NEC's UPC8179TK is a silicon monolithic integrated circuit
designed as an amplifier for mobile communications. This IC
can realize low current consumption with external chip induc-
tor. The incorporation of a chip identical to the conventional 6-
pin super minimold package (2.0 x 1.25 x 0.9 mm)
µPC8179TB
in a 6-pin leadless minimold package (1.5 x 1.1 x 0.55 mm) has
enabled a reduction in mounting area of 50 %. The
µPC8179TK
is ideally suited to replace the
µPC8179TB
for footprint reduc-
tion and increased design density. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has excellent performance uniformity
and reliability.
NEC's stringent quality assurance and test procedures assure
the highest performance. consistency and reliability.
APPLICATION
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
OUT
= 3.0 V, Z
S
= Z
L
= 50Ω, at LC matched Frequency)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
GP
Power Gain,
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, P
IN
= -30 dBm
f = 1.9 GHz, P
IN
= -30 dBm
f = 2.4 GHz, P
IN
= -30 dBm
UNITS
mA
dB
MIN
2.9
11.0
13.0
14.0
39.0
37.0
37.0
-0.5
-2.0
-3.0
–
–
–
4.0
4.0
6.0
UPC8179TK
TK
TYP
4.0
13.5
15.5
16.0
43.0
42.0
42.0
2.0
0.5
0.5
5.0
5.0
5.0
7.0
7.0
9.0
MAX
5.4
15.5
17.5
18.5
–
–
–
–
–
–
6.5
6.5
6.5
–
–
–
ISOL
Isolation,
dB
P
1dB
Output Power at
1 dB gain
compression,
Noise Figure,
dBm
NF
dB
RL
IN
Input Return Loss,
(without matching
circuit)
dB
California Eastern Laboratories
UPC8179TK
EVALUATION BOARD, 0.9 GHz
Vcc
P1
GND P2
V
CC
C2
C3
C4
C5
J2
C3C
PIN 1
Vcc
J1
IFin
C2 C3
C4
DEVICE ORIENTATION
RFout
C1
U1
C3C
C5
C1
IN
L1
C6
6
1
4
2,3,5
L1
OUT
50Ω
C6
50Ω
UPC8179TK
GETEK
H=.028
Er=4.2
ADD TAB
COMPONENT LIST
FORM
Chip Capacitor
SYMBOL
C
6
C
1,
C
5
C
2
, C
3,
C
4
Chip Inductor
L
1
VALUE
1 pF
51 pF
1800 pF
10 nH
1. 1.5 x 1.5 x 0.028", Getek laminate, double sided copper
2. Ground pattern on rear board
3. Solder plated patterns
4.
Through holes
EVALUATION BOARD, 1.9 GHz
Vcc
P1
GND P2
PIN 1
V
CC
C3C
Vcc
C
3
DEVICE ORIENTATION
C2
C3
C4
C
2
RFout
J2
C
4
C
5
J1
IFin
C1
U1
C3C
C7 C8
C5
L2
L1
C6
C
7
C
8
C
1
IN
50Ω
UPC8179TK
GETEK
H=.028
Er=4.2
ADD TAB
6
1
4
2,3,5
L
1
L
2
C
6
OUT
50Ω
COMPONENT LIST
FORM
Chip Capacitor
SYMBOL
C
7,
C
8
C
6
C
1,
C
5
C
2,
C
3,
C
4
Chip Inductor
L
2
L
1
VALUE
10 pF
.4 pF
51 pF
1000 pF
22 nH
2.7 nH
1. 1.5 x 1.5 x 0.028", Getek laminate, double sided copper
2. Ground pattern on rear board
3. Solder plated patterns
4.
Through holes
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