TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
2N6676
2N6678
2N6691
2N6693
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
2N6676 2N6678
2N6691 2N6693
300
400
450
650
450
650
8.0
5.0
15
2N6676 2N6691
2N6678 2N6693
6.0
(2)
3.0
(3)
175
175
-65 to +200
Max.
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6676, 2N6678
TO-3 (TO-204AA)*
@ T
A
= 25
0
C
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
Total Power Dissipation
P
T
T
op;
T
stg
Symbol
R
θ
JC
W
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
0
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= 1.5 Vdc
V
CE
= 650 Vdc, V
BE
= 1.5 Vdc
2N6676, 2N6691
2N6678, 2N6693
2N6676, 2N6691
2N6678, 2N6693
V
(BR)
CEO
300
400
0.1
0.1
Vdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
V
EB
= 8.0 Vdc
Collector-Base Cutoff Current
V
CB
= 450 Vdc
V
CB
= 650 Vdc
Symbol
I
EBO
2N6676, 2N6691
2N6678, 2N6693
I
CBO
Min.
Max.
2.0
1.0
1.0
Unit
mAdc
mAdc
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc; V
CE
= 3.0 Vdc
I
C
= 15 Adc; V
CE
= 3.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 15 Adc; I
B
= 3.0 Adc
Base-Emitter Saturation Voltage
I
C
= 15 Adc; I
B
= 3.0 Adc
h
FE
V
CE(sat)
V
BE(sat)
15
8.0
40
20
1.0
1.5
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc; V
CE
= 10 Vdc, f = 5 MHz
Output Capacitance
V
CB
= 10 Vdc; I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
t
3.0
150
10
500
0.1
0.6
2.5
0.5
0.5
pF
µs
µs
µs
µs
µs
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Cross-Over Time
d
r
t
s
t
f
t
c
t
See Figure 3 of MIL-PRF-19500/538
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 11.7 Vdc, I
C
= 15 Adc
All Types
Test 2
V
CE
= 30 Vdc, I
C
= 5.9 Adc
2N6676, 2N6678
Test 3
V
CE
= 100 Vdc, I
C
= 0.25 Adc
All Types
Test 4
V
CE
= 25 Vdc, I
C
= 7.0 Adc
2N6691, 2N6693
Test 5
V
CE
= 300 Vdc, I
C
= 20 mAdc
2N6676, 2N6691
V
CE
= 400 Vdc, I
C
= 10 mAdc
2N6678, 2N6693
Clamped Switching
T
A
= 25
0
C;
V
CC
= 15 Vdc
I
C
= 15 Adc; Clamped Voltage = 350 Vdc
2N6676, 2N6691
I
C
= 15 Adc; Clamped Voltage = 450 Vdc
2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
