PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Features
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
0
55
Efficiency
50
45
40
35
30
400 kHz
25
20
600 kHz
36
38
40
42
44
46
48
50
15
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
•
Modulation Spectrum (dB)
Drain Efficiency (%)
•
•
•
•
PTF080901E
Package 30248
Output Power (dBm)
PTF080901F
Package 31248
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 45 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.5
–62
–74
18
40
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
Min
17
40
—
Typ
18
42
–32
Max
—
—
–29
Unit
dB
%
dBc
2004-04-05
η
D
IMD
PTF080901
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 650 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.1
3.2
—
Max
—
1.0
—
4
1.0
Unit
V
µA
V
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
335
1.9
–40 to +150
0.52
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance
(measurements taken in production test fixture)
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
-20
9
90
80
Modulation Spectrum
P
OUT
= 40 W, f = 959.8 MHz
2.1
EVM RMS (average %)
.
EVM RMS (average %)
.
1.9
1.7
1.5
EVM
-30
-40
-50
400 KHz
-60
-70
600 KHz
-80
-90
-100
0.97
Modulation Spectrum (dBc)
8
7
6
5
4
3
2
1
0
36
38
40
42
44
46
48
50
EVM
Efficiency
60
50
40
30
20
10
0
1.3
1.1
0.9
0.7
0.5
0.47
0.57
0.67
0.77
0.87
Quiescent Current (A)
Output Power (dBm)
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
2
2004-04-05
Drain Efficiency (%)
70
PTF080901
Typical Performance
(cont.)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 650 mA, f
1
= 959 MHz, f
2
= 960 MHz
0
-10
-20
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
V
DD
= 28 V, I
DQ
= 650 mA
18
80
17
Gain
70
IMD (dBc)
Gain (dB)
-30
-40
-50
-60
-70
-80
43
45
3rd Order
16
Efficiency
60
5th
7th
15
Output Pow er
50
47
49
51
14
860
880
900
920
940
40
960
Output Power (dBm), PEP
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, f
1
= 959, f
2
= 960 MHz
-20
Broadband Performance
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 45 W
60
0
-3
Efficiency
40
30
20
Gain
10
860
Return Loss
-6
-9
-12
-15
960
Gain (dB), Efficiency (%)
-25
-30
480 mA
50
IMD (dBc)
-35
-40
-45
-50
-55
-60
39
41
43
45
47
49
51
820 mA
650 mA
880
900
920
940
Output Power (dBm), PEP
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
3
2004-04-05
Return Loss (dB)
Efficiency (%), P
OUT
(dBm)
PTF080901
Typical Performance
(cont.)
Three–Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 880 MHz
50
45
ACP Up
ACP Low
ALT Up
-44
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.50 A
3.00 A
4.50 A
1.01
1.00
0.99
0.98
0.97
0.96
-20
6.00 A
7.50 A
9.00 A
40
35
30
25
20
15
39
40
41
-50
-53
-56
Efficiency
-59
-62
-65
Normalized Bias Voltage
-47
1.02
Drain Efficiency (%)
Adjacent Channel
Power Ratio (dBc)
42
43
44
45
0
20
40
60
80
100
Output Power (dBm), Avg.
Case Temperature (ºC)
Broadband Circuit Impedance
D
GE
NE
Z
0
= 50
Ω
G
S
-
W
AVE
LE
NG
THS
Z Load
980 MHz
TOW
ARD
L
OA
D
-
N
GTHS
EL
E
WAV
0.
0
0.1
Frequency
MHz
860
920
940
960
980
Z Source
Ω
R
2.50
2.67
2.79
2.94
2.91
jX
–1.09
–0.43
–0.35
0.12
0.37
R
Z Load
Ω
jX
–1.08
–0.32
–0.21
0.27
0.53
1.98
1.99
1.87
1.85
1.79
860 MHz
860 MHz
0 .1
All published data at T
CASE
= 25°C unless otherwise indicated.
Data Sheet
5
2004-04-05
---
0.2
0.1
Z Source
Z Load
TOW
AR
D
Z Source
980 MHz
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