PTF180601
LDMOS Field Effect Transistor
60 W, DCS/PCS Band
1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched
GOLDMOS
FET intended for
EDGE applications in the DCS/PCS Band. Full gold metallization ensures
excellent device lifetime and reliability.
EDGE EVM Performance
EVM & Efficiency vs. Power Output
V
DD
= 28 V, I
DQ
= 0.8 A, f = 1989.8 MHz
4
40
Features
•
•
Broadband internal matching
Typical two-tone performance
- Average output power = 30 W
- Gain = 16.5 dB
- Efficiency = 35%
Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 15.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI Drift
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
•
EVM RMS (Average %)..
•
3
Efficiency
30
Efficiency (%)
•
•
•
2
20
1
EVM
0
35
37
39
41
43
45
10
0
PTF180601C
Package 21248
PTF180601E
Package 30248
Output Power (dBm)
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 22 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
1.7
–60
–73
16.5
32
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
η
D
IMD
Min
15
30
—
Typ
16.5
35
–30
Max
—
—
–28
Units
dB
%
dBc
2004-05-03
PTF180601
Electrical Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 800 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.135
3.2
0.01
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 60 W CW)
PTF180601C
PTF180601E
T
STG
R
θJC
PTF180601E
P
D
PTF180601C
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
159
0.91
180
1.03
–40 to +150
1.1
0.97
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Data Sheet
2
2004-05-03
PTF180601
Typical Performance
(measurements taken in production test fixture, at T
CASE
= 25°C unless otherwise indicated)
EDGE EVM Performance
at 26 V
V
DD
= 26 V, I
DQ
= 0.8 A, f = 1989.8 MHz
5
50
40
Efficiency
EDGE Modulation Spectrum Performance
Mod Spectrum vs. Power Output
V
DD
= 28 V, I
DQ
= 0.8 A, f = 1989.8 MHz
-55
50
40
400 KHz
Efficiency
30
20
10
600 KHz
-80
35
37
39
41
43
45
0
EVM RMS (Average %)..
4
3
2
1
EVM
0
35
37
39
41
43
45
Modulation Spectrum (dB)
-60
-65
-70
-75
Efficiency (%)
30
20
10
0
Output Power (dBm)
Output Power (dBm)
EVM & Modulation Spectrum Performance
f = 1989.8 MHz, Output Power = 22 W
8
-40
400 KHz
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.8 A, f = 1990 MHz
18
70
60
Gain
Modulation Spectrum (dB)
EVM RMS (Average %)
.
7
6
5
4
3
2
1
0.0
0.2
0.4
0.6
0.8
1.0
EVM
-50
-60
17
16
600 KHz
-70
-80
-90
-100
-110
1.4
15
14
Efficiency
13
12
11
30
35
40
45
50
40
30
20
10
0
1.2
Quiscent Drain Current (A)
Output Power (dBm)
Data Sheet
3
2004-05-03
Efficiency (%)
50
Gain (dB)
Efficiency (%)
PTF180601
Typical Performance
(cont.)
Output Power, Gain & Efficiency
(at P-1dB)
vs. Frequency
V
DD
= 28 V, I
DQ
= 0.8 A
19
Efficiency
Output Pow er
17
Gain
45
55
Power Gain vs. Output Power
V
DD
= 28 V, f = 1990 MHz
18
I
DQ
= 1.0 A
Power Gain (dB)
50
Output Power (dBm),
Efficiency (%)
18
Gain (dB)
17
I
DQ
= 800 mA
I
DQ
= 600 mA
16
16
40
15
1900
1920
1940
1960
1980
2000
35
2020
15
0
1
10
100
Frequency (MHz)
Output Power (W)
Broadband Test Fixture Performance
V
DD
= 28 V, I
DQ
= 0.8 A, P
OUT
= 60 W
20
70
Broadband Test Fixture Performance
V
DD
= 28 V, I
DQ
= 0.8 A, P
OUT
= 10 W
20
30
Gain
27
Gain (dB), Return Loss (dB)
Gain (dB), Return Loss (dB)
15
10
5
0
-5
-10
-15
Gain
15
10
5
0
-5
-10
-15
Efficiency (%)
21
18
Efficiency
15
12
9
Return Loss
6
2020
50
Efficiency
40
Return Loss
-20
1900
1930
1960
1990
30
2020
-20
1900
1930
1960
1990
Frequency (MHz)
Frequency (MHz)
Data Sheet
4
2004-05-03
Efficiency (%)
60
24
PTF180601
Typical Performance
(cont.)
Output Power vs. Supply Voltage
I
DQ
= 0.8 A, f = 1990 MHz
50
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 0.8 A, F
1
= 1990 MHz, F
2
= 1991 MHz
-20
-30
Output Power (dBm)
49
IMD (dBc)
48
47
46
45
44
22
24
26
28
30
32
-40
-50
-60
-70
3rd Order
5th Order
7th Order
-80
32
34
36
38
40
42
44
46
48
Supply Voltage (V)
Output Power, PEP (dBm)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
Normalized Bias Voltage
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.40
1.53
2.67
3.80
4.93
6.07
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
5
2004-05-03
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