Developmental PTF181301
LDMOS RF Power Field Effect Transistor
130 W, 1805–1880 MHz
Description
The PTF181301 is a 130 W, internally matched
GOLDMOS
FET intended
for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Features
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
EDGE EVM Performance
EVM & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 1.8 A, f = 1879.8 MHz
4
40
Efficiency
3
30
•
EVM RMS (Average %)
•
Efficiency (%)
2
20
•
•
•
1
EVM
0
35
38
40
43
45
48
50
10
0
Output Power (dBm)
PTF181301A
Package 20260
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.8 A, P
OUT
= 55 W, f = 1879.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
1.7
–60
–73
15.5
32
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.8 A, P
OUT
= 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency at –30 dBc IM3
Intermodulation Distortion
Developmental Data Sheet
1 of 4
Symbol
G
ps
Min
—
—
—
Typ
15.5
35
–30
Max
—
—
—
Unit
dB
%
dBc
2004-04-28
η
D
IMD
Developmental PTF181301
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1.8 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.07
3.2
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 130 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
350
2.0
–40 to +150
0.50
Unit
V
V
°C
W
W/°C
°C
°C/W
Developmental Data Sheet
2 of 4
2004-04-28
Developmental PTF181301
Ordering Information
Type
PTF181301A
Package Outline
20260
Package Description
Thermally enhanced, flange mount
Marking
PTF181301A
Package Outline Specifications
Package 20260
45° X (2.03
[.080])
2X 12.70
[.500]
4X R 1.52
[.060]
(2X 4.83±0.50
[.190±.020])
D
S
+0.10
LID 13.21 -0.15
[.520 +.004
]
-.006
2X 3.25
[.128]
13.72
[.540]
23.37±0.51
[.920±.020]
2X 1.63
[.064] R
G
SPH 1.57
[.062]
0.51
[.020]
22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
0.038 [.0015] -A-
27.94
[1.100]
1.02
[.040]
34.04
[1.340]
ERA-H-30260-2-1-2302
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Developmental Data Sheet
3 of 4
2004-04-28
PTF181301
Revision History:
04-04-28
Previous Version:
none
Page
Subjects (major changes since last revision)
Developmental Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
GOLDMOS
®
is a registered trademark of Infineon Technologies AG.
Edition 04-04-28
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
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