LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
| PTF211802 | PTF211802E | PTF211802A | |
|---|---|---|---|
| 描述 | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| 是否无铅 | - | 含铅 | 含铅 |
| 包装说明 | - | FLANGE MOUNT, R-CDFM-F4 | FLANGE MOUNT, R-CDFM-F4 |
| 针数 | - | 4 | 4 |
| Reach Compliance Code | - | compli | compli |
| ECCN代码 | - | EAR99 | EAR99 |
| 其他特性 | - | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | - | SOURCE | SOURCE |
| 配置 | - | COMMON SOURCE, 2 ELEMENTS | COMMON SOURCE, 2 ELEMENTS |
| 最小漏源击穿电压 | - | 65 V | 65 V |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | - | S BAND | S BAND |
| JESD-30 代码 | - | R-CDFM-F4 | R-CDFM-F4 |
| JESD-609代码 | - | e3 | e3 |
| 元件数量 | - | 2 | 2 |
| 端子数量 | - | 4 | 4 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 200 °C | 200 °C |
| 封装主体材料 | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 647 W | 498 W |
| 认证状态 | - | Not Qualified | Not Qualified |
| 表面贴装 | - | YES | YES |
| 端子面层 | - | MATTE TIN | MATTE TIN |
| 端子形式 | - | FLAT | FLAT |
| 端子位置 | - | DUAL | DUAL |
| 晶体管应用 | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | - | SILICON | SILICON |
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