电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

PHT2010H2464DGTA

产品描述Fixed Resistor, Thin Film, 0.2W, 2460000ohm, 300V, 0.5% +/-Tol, 55ppm/Cel, Surface Mount, 2010, CHIP
产品类别无源元件    电阻器   
文件大小117KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

PHT2010H2464DGTA概述

Fixed Resistor, Thin Film, 0.2W, 2460000ohm, 300V, 0.5% +/-Tol, 55ppm/Cel, Surface Mount, 2010, CHIP

PHT2010H2464DGTA规格参数

参数名称属性值
是否Rohs认证符合
Objectid145011032258
包装说明CHIP
Reach Compliance Codeunknown
Country Of OriginFrance
ECCN代码EAR99
YTEOL7.3
其他特性ANTI-SULFUR
构造Rectangular
JESD-609代码e4
安装特点SURFACE MOUNT
端子数量2
最高工作温度230 °C
最低工作温度-55 °C
封装高度0.4 mm
封装长度5.08 mm
封装形式SMT
封装宽度2.54 mm
包装方法TR, PLASTIC
额定功率耗散 (P)0.2 W
额定温度215 °C
电阻2460000 Ω
电阻器类型FIXED RESISTOR
尺寸代码2010
表面贴装YES
技术THIN FILM
温度系数55 ppm/°C
端子面层Gold (Au) - with Nickel (Ni) barrier
端子形状WRAPAROUND
容差0.5%
工作电压300 V

文档预览

下载PDF文档
PHT
www.vishay.com
Vishay Sfernice
High Stability - High Temperature (230 °C)
Thin Film Wraparound Chip Resistors, Sulfur Resistant
FEATURES
• Operating temperature range:
-55 °C; +215 °C
• Storage temperature: -55 °C; +230 °C
• Gold terminations (< 1 μm thick)
• 5 sizes available (0402, 0603, 0805, 1206,
2010); other sizes upon request
• Temperature coefficient down to 15 ppm
(-55 °C; +215 °C)
• Tolerance down to 0.05 %
• Load life stability: 0.35 % max. after 2000 h at 220 °C
(ambient) at Pn
• Shelf life stability: 0.7 % typ. (1 % max.) after 15 000 h at
230 °C
• SMD wraparound
• TCR remains constant after long term storage at 230 °C
(15 000 h)
• Sulfur resistant (per ASTM B809-95 humid vapor test)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
INTRODUCTION
For applications such as down hole applications, the need
for parts able to withstand very severe conditions
(temperature as high as 215 °C powered or up to 230 °C
un-powered) has leaded Vishay Sfernice to push out the
limit of the thin film technology.
Designers might read the application note: Power
Dissipation Considerations in High Precision Vishay
Sfernice Thin Film Chip Resistors and Arrays
(P, PRA etc…) (High Temperature Application)
www.vishay.com/doc?53047
in conjunction with this
datasheet to help them to properly design their PCBs and
get the best performances of the PHT.
Vishay Sfernice R&D engineers will be willing to support any
customer design considerations.
STANDARD ELECTRICAL SPECIFICATIONS
MODEL
PHT0402
PHT0603
PHT0805
PHT1206
PHT2010
SIZE
0402
0603
0805
1206
2010
RESISTANCE
RANGE
10 to 130K
10 to 320K
10 to 720K
10 to 2.7M
10 to 7.5M
RATED POWER
(1)(2)
P
215 °C
W
0.0189
0.0375
0.06
0.1
0.2
(4)
LIMITING ELEMENT
VOLTAGE
V
50
75
150
200
300
TOLERANCE
(2)
±%
0.05, 0.1, 0.5, 1
0.05, 0.1, 0.5, 1
0.05, 0.1, 0.5, 1
0.05, 0.1, 0.5, 1
0.05, 0.1, 0.5, 1
TEMPERATURE
COEFFICIENT
(3)
± ppm/°C
10, 15, 25, 30, 50, 55
10, 15, 25, 30, 50, 55
10, 15, 25, 30, 50, 55
10, 15, 25, 30, 50, 55
10, 15, 25, 30, 50, 55
Notes
(1)
For power handling improvement, please refer to application note 53047: “Power Dissipation Considerations in High Precision Vishay
Sfernice Thin Film Chip Resistors and Arrays (High Temperature Applications)”
www.vishay.com/doc?53047
and consult Vishay Sfernice
(2)
See Table 2 on next page
(3)
See Table 1 on next page
(4)
It is possible to dissipate up to 0.3 W, but there will be an additional drift of 0.1 % after load life
CLIMATIC SPECIFICATIONS
Operating temperature range
Storage temperature range
-55 °C; +215 °C
-55 °C; +230 °C
MECHANICAL SPECIFICATIONS
Substrate
Resistive Element
Passivation
Protection
Terminations
Alumina
Nichrome (NiCr)
Silicon nitride (Si
3
N
4
)
Epoxy + silicone
Gold (< 1 μm) over nickel barrier
PERFORMANCE VS. HUMID SULFUR VAPOR
Test conditions
Test results
Revision: 03-Jan-2019
50 °C ± 2 °C, 85 % ± 4 % RH,
exposure time 500 h
Resistance drift < (0.05 %
R
+ 0.05
),
no corrosion products observed
Note
• For other terminations, please consult
Document Number: 53050
1
For technical questions, contact:
sferthinfilm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TI C2000 TMS320F28379D SCID SCIB 的配置与使用
TI的官方例程里面只给了SCIA的配置而没有给其他的SCI的配置方法 其实这些的配置都是一样的,下面以SCIB和SCID的配置为例并结合数据手册说明一下配置过程:至于一些参数为什么要向程序中那样 ......
火辣西米秀 微控制器 MCU
看了一位大学老师的博客,有感而发
博客是西安交大的一位教授的,内容如下:=======================================================================关于基础,不得不说最近遇到好多问题,都与基本概念相关。忍不住, ......
yuyue_dl 工作这点儿事
mega128的一些资料 希望对你们有用
本帖最后由 paulhyde 于 2014-9-15 09:11 编辑 mega128的一些资料 希望对你们有用 ...
x460440312520 电子竞赛
【旧帖浮沉3】你想指定变量地址?其实他需要的是一个共享内存机制
照例,翻老帖子 ——这里,一次性和这些老帖子的作者道个歉:为了方便我的记忆,我在每个老帖子的标题前加了一些字样 分别是 CHECKED MARKED LEFT CHECKED表示我已经看过; MARKED表示我已经 ......
辛昕 编程基础
低功耗多协议芯片ZigBee/6LoWPAN/BLE/Thread 芯片CC2652
芯片介绍CC2652R 协议栈下载,CC2652RSDK,http://www.ti.com/tool/simplelink-cc26x2-sdk 开发板,CC2652 LaunchPad,http://www.ti.com/tool/LAUNCHXL-CC26X2R1 开发环境,CCS 7.4, ......
Aguilera 无线连接
请问如何向LM3S9B90的RAM里传输数据
外接设备的并口,8位输出,16位输入。 如何向LM3S9B90的MCU-RAM里传输数据,不是ROM。 目的就是数据通过外设的并口与LM3S通讯,暂存在RAM里,之后再将数据分析,筛选,传输到别的目标板上。 ......
collean 微控制器 MCU

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 564  1744  35  749  277  12  36  1  16  6 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved