IGBT
MODULE
CIRCUIT
Six-
Six-Pack 100A 600V
OUTLINE DRAWING
PTMB100A6
12- fasten- tab No 110
Dimension(mm)
Approximate Weight : 550g
MAXMUM RATINGS
(Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
j
T
stg
V
ISO
F
TOR
PTMB100A6
600
+/ - 20
100
200
400
-40 to +150
-40 to +125
2500
2
1.4
Unit
V
V
A
W
°C
°C
V
N•m
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS
(Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(th)
Cies
t
r
t
on
t
f
t
off
Test Condition
V
CE
=600V,V
GE
=0V
V
GE
=+/- 20V,V
CE
=0V
I
C
=100A,V
GE
=15V
V
CE
=5V,I
C
=100mA
V
CE
=10V,V
GE
=0V,f=1MHz
V
CC
= 300V
R
L
= 3 ohm
R
G
= 7.5 ohm
V
GE
= +/- 15V
Min.
-
-
-
4.0
-
-
-
-
-
Typ.
-
-
2.1
-
10000
0.15
0.25
0.2
0.45
Max.
1.0
1.0
2.6
8.0
-
0.3
0.4
0.35
0.7
Unit
mA
µA
V
V
pF
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
I
F
I
FM
100
200
Unit
A
Typ.
1.9
0.15
Characteristic
Peak Forward Voltage
Reverse Recovery Time
Symbol
V
F
t
rr
Test Condition
I
F
=100A,V
GE
=0V
I
F
=100A,V
GE
=-10V,di/dt=100A/
µs
Min.
-
-
Max.
2.4
0.25
Unit
V
µs
Unit
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Symbol
R
th(j-c)
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.31
0.65
PTMB100A6
Fig.1- Output Characteristics
(Typical)
200
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
T
C
=25℃
16
T
C
=25℃
V
GE
=20V
12V
I
C
=40A
200A
Collector to Emitter Voltage V
CE
(V)
15V
10V
14
12
10
8
6
4
2
0
100A
Collector Current I
C
(A)
150
100
9V
50
8V
7V
0
0
2
4
6
8
10
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
400
350
300
250
200
16
T
C
=125℃
I
C
=40A
200A
Collector to Emitter Voltage V
CE
(V)
100A
12
10
8
6
4
2
0
Collector to Emitter Voltage V
CE
(V)
14
R
L
=3Ω
T
C
=25℃
14
Gate to Emitter Voltage V
GE
(V)
12
10
8
V
CE
=300V
150
6
200V
100
100V
50
0
4
2
0
0
4
8
12
16
20
0
100
200
300
400
Gate to Emitter Voltage V
GE
(V)
Total Gate Charge Qg
(nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
50000
20000
10000
1
Fig.6- Collector Current vs. Switching Time
(Typical)
V
CC
=300V
R
G
=7.5Ω
V
GE
=±15V
T
C
=25℃
Cies
Coes
Cres
V
GE
=0V
f=1MHZ
T
C
=25℃
0.9
0.8
Switching Time t
(μs)
Capacitance C
(pF)
5000
2000
1000
500
200
100
50
0.2
0.5
1
2
5
10
20
50
100
200
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
toff
ton
tf
tr
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
PTMB100A6
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
5
200
(Typical)
T
C
=25℃
180
160
2
V
CC
=300V
I
C
=100A
V
G
=±15V
T
C
=25℃
T
C
=125℃
Switching Time t
(μs)
Forward Current I
F
(A)
toff
ton
1
140
120
100
80
60
40
tr
0.5
tf
0.2
0.1
20
0.05
1
10
100
0
0
1
2
3
4
Series Gate Impedance R
G
(Ω)
Forward Voltage V
F
(V)
Fig.9- Reverse Recovery Characteristics
(Typical)
500
1000
Fig.10- Reverse Bias Safe Operating Area
(Typical)
500
200
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
I
F
=100A
T
C
=25℃
200
R
G
=7.5Ω
V
GE
=±15V
T
C
≦125℃
Collector Current I
C
(A)
trr
100
100
50
20
10
5
2
1
0.5
0.2
50
20
10
I
RrM
5
0
100
200
300
400
500
600
0.1
0
200
400
600
800
-di/dt
(A/μs)
Collector to Emitter Voltage V
CE
(V)
Fig.11- Transient Thermal Impedance
1
(℃/W)
5x10
-1
2x10
-1
1x10
-1
5x10
-2
2x10
-2
1x10
-2
5x10
-3
FRD
IGBT
Transient Thermal Impedance Rth
(J-C)
T
C
=25℃
2x10
-3
1 Shot Pulse
10
-4
10
-3
10
-2
10
-1
1
10
1
1x10
-3 -5
10
Time t
(s)
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