Power Transistor Arrays (F-MOS FETs)
PUB4701
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
q
Low-voltage drive
unit: mm
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
1.65±0.2
9.5±0.2
8.0
25.3±0.2
4.0±0.2
4.4±0.5
0.5±0.15
1.0±0.25
2.54±0.2
9!2.54=22.86±0.25
0.8±0.25
0.5±0.15
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
150
±20
±6
±12
22.5
15
3.5
150
−55
to +150
Unit
V
V
A
A
mJ
W
°C
°C
C1.5±0.5
1
2
3
4
5
6
7
8
9 10
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25°C
Ta = 25°C
L = 5mH, I
L
= 3A, 1 pulse
s
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
V
GS
= 10V, I
D
= 3A
V
DD
= 100V, R
L
= 33.3Ω
Conditions
V
DS
= 120V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
GS
= 4V, I
D
= 3A
V
DS
= 10V, I
D
= 3A
I
DR
= 3A, V
GS
= 0
620
V
DS
= 10V, V
GS
= 0, f = 1MHz
120
35
10
30
85
290
3
150
1
0.42
0.5
5.3
−1.7
2.5
0.6
0.7
min
typ
max
10
±1
Unit
µA
µA
V
V
Ω
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
1
Power Transistor Arrays (F-MOS FETs)
Area of safe operation (ASO)
16
PUB4701
I
D
V
DS
7
T
C
=25˚C
P
D
Ta
Allowable power dissipation P
D
(W)
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
I
DP
10
I
D
14
12
6
4.0V
Drain current I
D
(A)
Drain current I
D
(A)
t=1ms
3
10ms
50ms
1
(1)
10
8
6
(2)
4
(3)
2
0
5
3.5V
4
3
2
3.0V
0.3
Non repetitive pulse
T
C
=25˚C
3
10
30
100
1
2.5V
0
0
20
40
60
80 100 120 140 160
0
4
8
12
16
20
0.1
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
I
D
V
GS
Drain to source ON-resistance R
DS(on)
(mΩ)
6
V
DS
=10V
T
C
=25˚C
5
1.2
R
DS(on)
I
D
T
C
=25˚C
1.0
Drain current I
D
(A)
4
0.8
3
0.6
V
GS
=4V
0.4
10V
2
1
0.2
0
0
2
4
6
8
10
12
0
0
1
2
3
4
5
6
Gate to source voltage V
GS
(V)
Drain current I
D
(A)
2
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
