Ordering Information .................................................................................................................................................................... 2
Dimensions and Patterns ― 3.2 x 2.5 mm................................................................................................................................. 14
Dimensions and Patterns ― 5.0 x 3.2 mm................................................................................................................................. 14
Dimensions and Patterns ― 7.0 x 5.0 mm................................................................................................................................. 15
Additional Information ................................................................................................................................................................ 16
Revision History ......................................................................................................................................................................... 17
Rev 1.07
Page 3 of 17
www.sitime.com
SiT3372
1 MHz to 220 MHz Ultra-low Jitter Differential VCXO
Electrical Characteristics
Table 2. Electrical Characteristics – Common to LVPECL, LVDS and HCSL
All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage with standard
output termination shown in the termination diagrams. Typical values are at 25°C and nominal supply voltage.
Parameter
Output Frequency Range
Frequency Stability
Symbol
f
F_stab
Min.
1
-15
-25
-35
-50
Operating Temperature Range
T_use
-20
-40
-40
-40
Supply Voltage
Vdd
2.97
2.7
2.52
2.25
Pull Range
PR
Typ.
–
–
–
–
–
–
–
–
–
3.3
3.0
2.8
2.5
Max.
220
+15
+25
+35
+50
+70
+85
+95
+105
3.63
3.3
3.08
2.75
Unit
MHz
ppm
ppm
ppm
ppm
°C
°C
°C
°C
V
V
V
V
ppm
See the APR (Absolute Pull Range)
Table 11.
Contact SiTime
for custom pull range options
Voltage at which maximum frequency deviation is guaranteed
Voltage at which minimum frequency deviation is guaranteed
Contact SiTime
for other input bandwidth options
Extended Industrial
Extended Commercial
Industrial
Condition
Accurate to 6 decimal places
Inclusive of initial tolerance, operating temperature, rated power
supply voltage, load variations, and first year aging at 25
°C,
with VIN voltage at Vdd/2.
±15
ppm is only guaranteed for pull range up to
±100
ppm.
Frequency Range
Frequency Stability
Temperature Range
Supply Voltage
Voltage Control Characteristics
±25, ±50, ±80, ±100, ±150,
±200, ±400, ±800, ±1600,
±3200
90%
–
–
–
–
–
–
10
10
–
–
10%
–
–
1.0
–
Input Characteristics
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
Duty Cycle
Startup Time
OE Enable/Disable Time
VIH
VIL
Z_in
DC
T_start
T_oe
70%
–
–
45
–
–
–
–
100
–
–
–
–
30%
-
55
3.0
3.8
Vdd
Vdd
kΩ
%
ms
µs
Measured from the time Vdd reaches its rated minimum value
f = 156.25 MHz. Measured from the time OE pin reaches
rated VIH and VIL to the time clock pins reach 90% of swing
and high-Z. See
Figure 9
and
Figure 10
Pin 2, OE
Pin 2, OE
Pin 2, OE logic high or logic low
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Pull Range Linearity
Frequency Change Polarity
VC_U
VC_L
VC_z
V_c
Lin
–
Vdd
Vdd
MΩ
kHz
%
Positive Slope
Output Characteristics
Startup and OE Timing
Rev 1.07
Page 4 of 17
www.sitime.com
SiT3372
1 MHz to 220 MHz Ultra-low Jitter Differential VCXO
Table 3. Electrical Characteristics – LVPECL Specific
Parameter
Current Consumption
OE Disable Supply Current
Output Disable Leakage Current
Maximum Output Current
Output High Voltage
Output Low Voltage
Output Differential Voltage Swing
Rise/Fall Time
RMS Period Jitter
[4]
RMS Phase Jitter (random)
Symbol
Idd
I_OE
I_leak
I_driver
VOH
VOL
V_Swing
Tr, Tf
T_jitt
T_phj
Min.
–
–
–
–
Vdd-1.15
Vdd-2.0
1.2
–
–
–
Typ.
78
53
0.15
–
–
–
1.6
225
1.0
0.225
Max.
92
61
–
33
Vdd-0.7
Vdd-1.5
2.0
290
1.6
0.270
Unit
mA
mA
A
mA
V
V
V
ps
ps
ps
Condition
Excluding Load Termination Current, Vdd = 3.3 V or 2.5 V
OE = Low
OE = Low
Maximum average current drawn from OUT+ or OUT-
See
Figure 5
See
Figure 5
See
Figure 6
20% to 80%, see
Figure 6
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdd levels, includes spurs, pull range =
±100
ppm. Temperature
ranges -20 to 70°C and -40 to 85°C
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdd levels, includes spurs, pull range =
±100
ppm. Temperature
ranges -40 to 95°C and -40 to 105°C
f = 156.25 MHz, IEEE802.3-2005 10 GbE jitter mask integration
bandwidth = 1.875 MHz to 20 MHz, includes spurs, all Vdd
levels
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdd levels, includes spurs, pull range =
±100
ppm. Temperature
ranges -20 to 70°C and -40 to 85°C
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdd levels, includes spurs, pull range =
±100
ppm. Temperature
ranges -40 to 95°C and -40 to 105°C
f = 156.25 MHz, IEEE802.3-2005 10 GbE jitter mask integration
bandwidth = 1.875 MHz to 20 MHz, includes spurs, all
1、引言 汽车污染是当前人们最为关心和急需解决的重要课题之一。作为汽车排气污染物的检测的重要方法,简易瞬态工况法（VMAS法，IG法）可以统计排放总质量，监控车辆的真实排放情况，设备成本不高，测量比较准确，与新车认证检测结果具有相关性，可以检测NO相关因子等一系列优点，成为人们研究的热点。VMAS（Vehicle Mass Analysis System）检测方法在美国和欧洲都有很好的应用基础，...[详细]
三星刚出的旗舰新机Galaxy S III固然不错，但是高昂的价格不是每个人都能承受的起。昨天我们报道了一部山寨版的i9300，而现在该机价格和具体配置已经全部出炉。 这款山寨的Galaxy S III名叫HDC Galaxy S3，其外形甚至UI界面都与原型机异常相似。该机的三围为138×70×9.2mm，配备了一块4.7寸触摸屏，分辨率只有800×480像素。
该机还搭载了...[详细]
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
