ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDIP16, CERAMIC, DIP-16
| 参数名称 | 属性值 |
| 包装说明 | DIP, DIP16,.3 |
| Reach Compliance Code | unknow |
| 其他特性 | TCO OUTPUT |
| 计数方向 | UP |
| 系列 | ACT |
| JESD-30 代码 | R-GDIP-T16 |
| JESD-609代码 | e0 |
| 长度 | 19.43 mm |
| 负载电容（CL） | 50 pF |
| 负载/预设输入 | YES |
| 逻辑集成电路类型 | BINARY COUNTER |
| 最大频率@ Nom-Su | 85000000 Hz |
| 最大I（ol） | 0.024 A |
| 工作模式 | SYNCHRONOUS |
| 位数 | 4 |
| 功能数量 | 1 |
| 端子数量 | 16 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP16,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| 传播延迟（tpd） | 11 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class V |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 总剂量 | 100k Rad(Si) V |
| 触发器类型 | POSITIVE EDGE |
| 宽度 | 7.62 mm |
| 最小 fmax | 95 MHz |
| Base Number Matches | 1 |
| 5962R9172301VEA | 54ACT163JRQMLV | 54ACT163WRQMLV | 54ACT163ERQMLV | 5962R9172301VFA | 5962R9172301V2A | |
|---|---|---|---|---|---|---|
| 描述 | ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDIP16, CERAMIC, DIP-16 | ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDIP16, CERAMIC, DIP-16 | ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDFP16, CERPACK-16 | ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CQCC20, CERAMIC, LCC-20 | ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CDFP16, CERAMIC, DFP-16 | ACT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP BINARY COUNTER, CQCC20, CERAMIC, LCC-20 |
| 包装说明 | DIP, DIP16,.3 | DIP, DIP16,.3 | DFP, FL16,.3 | QCCN, LCC20,.35SQ | DFP, FL16,.3 | QCCN, LCC20,.35SQ |
| Reach Compliance Code | unknow | compli | compliant | compliant | unknown | unknown |
| 计数方向 | UP | UP | UP | UP | UP | UP |
| 系列 | ACT | ACT | ACT | ACT | ACT | ACT |
| JESD-30 代码 | R-GDIP-T16 | R-GDIP-T16 | R-GDFP-F16 | S-CQCC-N20 | R-GDFP-F16 | S-CQCC-N20 |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
| 负载/预设输入 | YES | YES | YES | YES | YES | YES |
| 逻辑集成电路类型 | BINARY COUNTER | BINARY COUNTER | BINARY COUNTER | BINARY COUNTER | BINARY COUNTER | BINARY COUNTER |
| 最大I（ol） | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 位数 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 16 | 16 | 16 | 20 | 16 | 20 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DFP | QCCN | DFP | QCCN |
| 封装等效代码 | DIP16,.3 | DIP16,.3 | FL16,.3 | LCC20,.35SQ | FL16,.3 | LCC20,.35SQ |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | SQUARE |
| 封装形式 | IN-LINE | IN-LINE | FLATPACK | CHIP CARRIER | FLATPACK | CHIP CARRIER |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 传播延迟（tpd） | 11 ns | 10.5 ns | 10.5 ns | 10.5 ns | 11 ns | 11 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V | MIL-PRF-38535 Class V |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | FLAT | NO LEAD | FLAT | NO LEAD |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | DUAL | QUAD |
| 总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V |
| 触发器类型 | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE |
| 最小 fmax | 95 MHz | 90 MHz | 90 MHz | 90 MHz | 95 MHz | 95 MHz |
| JESD-609代码 | e0 | e0 | e0 | - | e0 | e0 |
| 长度 | 19.43 mm | 19.43 mm | 9.6645 mm | 8.89 mm | - | 8.89 mm |
| 座面最大高度 | 5.08 mm | 5.08 mm | 2.032 mm | 1.905 mm | - | 1.905 mm |
| 端子面层 | TIN LEAD | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | - | TIN LEAD | TIN LEAD |
| 宽度 | 7.62 mm | 7.62 mm | 6.604 mm | 8.89 mm | - | 8.89 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
| 最大频率@ Nom-Sup | - | - | 90000000 Hz | 90000000 Hz | 85000000 Hz | 85000000 Hz |
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