SA5.0 thru SA170CA
GLASS PASSIVATED JUNCTION TRAN-
SIENT VOLTAGE SUPPRESSOR
CHENG- YI
ELECTRONIC
VOLTAGE 6.8 to 144 VOLTS
400 WATT PEAK POWER
1.0 WATTS STEADY STATE
DO-15
FEATURES
Plastic package has Underwrites Laboratory
Flammability Classification 94V-O
Glass passivated chip junction
500W Peak Pulse Power capability
on 10/1000 s waveform
Excellent clamping capability
Repetition rate (duty cycle):0.01%
Low incremental surge resistance
Fast response time: typically less than 1.0 ps
from 0 volts to BV for unidirctional and 5.0ns
for bidirctional types
Typical I
D
less than 1 A above 10V
High tempreature soldering guaranteed:
300
0
C/10 seconds .375", (9.5mm)
lead length/51bs.,(2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-15 Molded plastic over passivated junction
Terminals:Plated Axial leads, solderable per MIL-STD-750, Method 2026
Polarity:Color band denotes positive end (cathode) except Bidirectionals types
Mounting Position
Weight:0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
RATINGS
Peak Pulse Power Dissipation on 10/1000
Peak Pulse Current of on 10/1000
Steady Power Dissipation at T
L
=75
0
C
Lead Lengths .375",(9.5mm)
(NOTE 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Super-
imposed on Rated Load, unidirrctional only (JEDEC Method)
(NOTE 3)
Operating Junction and Storage Temperature Range
0
SYMBOL
s waveform
(NOTE 1,2,Fig.1)
P
PPM
I
PPM
P
M(AV0
s waveform
(NOTE 1,Fig.3)
VALUE
Minimum 5000
SEE TABLE 1
1.0
UNITS
Watts
Amps
Watts
Amps
0
I
FSM
T
J
, T
STG
70.0
-65 to + 175
C
Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25 C per Fig.2
2. Measured on copper Leaf area of 1.57 in
2
(40mm
2
) per Figure 5
3. 8.3ms single half sine-wave or equivalent square wave, Duty Cycle=4 pulses per minutes maximum.
SA5.0 thru SA170CA
GLASS PASSIVATED JUNCTION TRAN-
SIENT VOLTAGE SUPPRESSOR
CHENG- YI
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
SA5.0 THRU SA170CA
Fig. 1 - PEAK PULSE POWER VS PULSE TIME
PEAK PULSE POWER (P
PP
) OR CURRENT (l
PP
)
DERATING PERCENTAGE %
100
Fig. 2 - PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, kW
100
Non-Repetitive
Pulse waveform
Shown in Flgure 3
T
A
=25
0
C
75
10
50
1.0
25
0.1
0.1 s
1.0 s
10 s
100 s
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
td, PULSE WIDTH,
SEC
T
A
, AMBIENT TEMPERATURE,
0
C
Fig. 3 - PULSE WAVEFORM
150
Fig. 4 - TYPICAL JUNCTION CAPACIT
ANCE
UNIDIRECTIONAL
6,000
4,000
0
TJ=25C
f=1.0MHz
Vsig=50mVp-p
I
PPM
,
PEAK PULSE CURRENT, %
tf=10 se
Peak Value
Ippm
T
A
=25
0
C
Pulse Width (td) is Defined
as the Poitn Where the Peak
Current Decays to 50% of Ipp
2,000
Measursd at
Zero Bias
100
CJ, CAPACITANCE, pF
Half Value-Ipp
2
50
10/1000 sec Waveform
as Defined by R.E.A
e-kt
td
0
1.0
2.0
3.0
4.0
1,000
800
600
400
200
100
80
60
40
20
Measursd at
Stand-Off
Voltage(V
MW
)
0
t, TIME, ms
Pm
(AV)
STEADY STATE POWER DISSIPATION, WATTS
Fig. 5 - STEADY STATE POWER
DERATING CURVE
1.6
1.4
1.2
10
1.0
2.0
10 20
100 200
V(
WM
), REVERSE STAND-OFF VOLT
AGE,
VOLTS
Fig. 6 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
I
FSM
, PEAK FORWARD SURGE CURRENT
AMPERES
200
TJ=TJ max
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
0
l
=375"(9.5mm)
100
8.3ms Single Half Sine Wave
JEDEC Method
50
40mmx40mmx1mm Cu
(1.58"x1.58"x.040")
150
175
200
T
L
, LEAD TEMPERATURE, C
10
1
2
4
6
8 10
20
40
60 80100
NUMBER OF CYCLES AT 60 Hz
Microchip MCU
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