RS4005G thru RS410G
KBJ4005G thru KBJ410G
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
4.0 Amperes
.189(4.8)
.382(9.7)
.366(9.3)
.118(3.0)X45
.992(25.2)
.916(26.0)
.173(4.4)
.150(3.8)
.134(3.4)
.60(15.3)
.578(14.7)
.157(4.0)
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Realiable low cost construction utilizing
molded plastic technique
Plastic material has Underwriters Laboratory
flammability classification 94V-O
Lead solderable per MIL-STD-202 Meyhod 208
Surge overload rating to 120 Amperes peak
Polarity symbols molded on body
Mounting position:Any
Weight:0.16 ounce 4.6 grams
+
~
.075(1.9)
.060(1.5)
~
-
.145(3.7)
.130(3.3)
.700(17.8)
.677(17.2)
.134(3.4)
.122(3.1)
.114(2.9)
.098(2.5)
.043(1.1)
.035(0.9)
.030(7.70)
.287(7.30)
.043(1.1)
.031(.80)
All Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RS4005G
RS401G
RS402G
KBJ402G
200
140
200
RS404G
RS406G
RS408G
KBJ408G
800
560
800
RS410G
KBJ410G
1000
700
1000
KBJ4005G KBJ401G
KBJ404G KBJ406G
400
280
400
4.0
600
420
600
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @
TC=115 C
0
V
RRM
V
RMS
V
DC
V
(AV)
50
35
50
100
70
100
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC METHOD)
Maximum DC Forward Voltage
drop per element at 2.0A DC
Maximum DC Reverse Current at rated
@ TA=250 C
DC Blocking Voltage per element
@ TA=125 C
0
0
I
FSM
120
A
V
F
I
R
C
J
R
JC
T
J
T
STG
1.0
5
500
40
5.5
0
V
A
A
PF
Typical Junction Capacitance ( Note 1)
Typical Thermal Resistance ( Note 2)
Operating Temperature Range
Storage Temperature Range
C/W
0
-55 to +150
-55 to +150
C
C
0
Notes:1.Measured at 1.0 MHZ and applied reverse voltage of 4.0v DC 2.Thermal Resistance Junction to Case
RS4005G thru RS410G
KBJ4005G thru KBJ410G
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
KBJ4005G THRU KBJ410G
RS4005G THRU RS410G
Fig.1
-
MAXIMUM FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
5
4
120
100
3
80
2
60
1
0
TJ=150C
single sine-wave
(JEDEC Method)
Fig.4
-
MAXIMUM NON-REPETITIVE SURGE CURRENT
60Hz RESISTIVE OR
INDUCTIVE LOAD
50
75
100
125
150
40
20
0
1
2
5
10
20
50
100
25
CASE TEMPERATURE,
0
C
INSTANTANEOUS FORWARD CURRENT. AMPERES
Fig.2 - TYPICAL FORWARD
CHARACTERISTICS
10
0
TJ=150C
NUMBER OF CYCLES AT 60 Hz
Fig.5
-
TYPICAL REVERSE
CHARACTERISTICS
1.0
1000
TJ=25
0
C
0
TJ=150C
0.1
0
TJ=125C
100
.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
TJ=100C
INSTANTANEOUS FORWARD VOLT
AGE, VOLTS
10
Fig.3 - TYPICAL JUNCTION CAPACITANCE
100
1.0
TJ=25 C
f=1.0MHz
0
CAPACITANCE, pF
TJ=25
0
C
50
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
10
1
4
10
100
REVERSE VOLTAGE, VOLTS
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