SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES
• Ultra high power output
• Four wire bonds on die corners
• Very narrow optical beam
• Standard 3-lead TO-39 hermetic package
• Chip size .030 x .030 inches
OD-50L
ANODE
(CASE)
GLASS
DOME
.250
.262
.357
.362
.100
.018
.324
.332
.200
.031
.025
.071
.095
.500
CATHODE
.040
45°
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Radiant Intensity, I
e
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
Δλ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
TEST CONDITIONS
I
F
= 500mA
I
F
= 10A
I
F
= 500mA
I
F
= 50mA
CE
MB
ER
MIN
40
TYP
50
600
500
880
80
7
1.65
5
30
90
0.7
0.7
1000mW
500mA
10A
5V
260°C
-55°C to 100°C
100°C
150°C/W Typical
60°C/W Typical
RoHS
DE
I
F
= 500mA
I
R
= 10μA
V
R
= 0V
LI
FE
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
1
Peak Forward Current (10μs, 400Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
EN
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
D
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
OF
Continuous Forward Current
20
13
MAX
UNITS
mW
mW/sr
nm
nm
Deg
2
Volts
Volts
pF
μsec
μsec
.246
.254
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two cathode
pins
must be
externally connected together.
SUPER HIGH-POWER GaAlAs IR EMITTERS
1,100
1,000
900
POWER DISSIPATION (mW)
800
700
600
500
400
300
200
100
0
25
50
75
AMBIENT TEMPERATURE (°C)
100
NO
HEAT SINK
INFINITE
HEAT SINK
OD-50L
100
PEAK FORWARD CURRENT, Ip (amps)
THERMAL DERATING CURVE
MAXIMUM PEAK PULSE CURRENT
10
t = 10μs
MAXIMUM RATINGS
t = 50μs
t = 100μs
1
t
Ip
0.1
0.01
D=
T
0.1
1
DUTY CYCLE, D (%)
TYPICAL CHARACTERISTICS
100
DEGRADATION CURVE
100
I
F
= 150mA
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
90
I
F
= 250mA
RELATIVE POWER OUTPUT (%)
80
80
70
T
CASE
= 25°C
NO PRE BURN-IN PERFORMED
I
F
= 450mA
60
50
10
1
10
2
10
3
STRESS TIME, (hrs)
10
4
CE
10
5
0
–25
–20
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
RELATIVE POWER OUTPUT
8
10
0.5
–50
1,000
POWER OUTPUT, P (mW)
o
100
10
1,000
1
10
MB
E
60
40
20
–15
–10
–5
0
5
10
BEAM ANGLE,
θ(deg)
15
20
25
12
10
FORWARD I-V CHARACTERISTICS
DE
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, I
F
(amps)
6
4
2
0
OF
0
LI
2
FE
8
4
6
FORWARD VOLTAGE, V (volts)
F
–25
R
0
25
50
AMBIENT TEMPERATURE (°C)
75
100
SPECTRAL OUTPUT
POWER OUTPUT vs FORWARD CURRENT
100
RELATIVE POWER OUTPUT (%)
EN
D
80
60
40
20
0
750
800
850
900
WAVELENGTH,
λ(nm)
950
100
1,000
FORWARD CURRENT, I
F
(mA)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
20
13
10
100
DC
PULSE
10μs, 100Hz
10,000
t
T
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