CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
DC Forward Voltage Drop
T
A
= 25
o
C
SYMBOL
V
F
TEST CONDITIONS
I
F
(Anode)
100µA
1mA
10mA
MIN
-
-
-
30
30
-
-
-
-
-
TYP
0.7
0.78
0.93
50
50
-
-
0.55
-1.5
50
See Figure 4
See Figure 5
See Figure 6
I
FA
= 1mA, V
DS
= 10V
0.9
0.96
-
MAX
0.9
1
1.2
-
-
100
100
-
-
-
UNITS
V
V
V
V
V
nA
nA
mV
mV/
o
C
ns
pF
pF
pF
-
DC Reverse Breakdown Voltage
DC Breakdown Voltage Between Any Diode and
Substrate
DC Reverse (Leakage) Current
DC Reverse (Leakage) Current Between Any Diode
and Substrate
Magnitude of Diode Offset Voltage Between Diode Pairs
Temperature Coefficient of Forward Voltage Drop
Reverse Recovery Time
Diode Capacitance
Diode Anode-to-Substrate Capacitance
Diode Cathode-to-Substrate Capacitance
Magnitude of Cathode-to-Anode Current Ratio
V
(BR)R
V
(BR)DI
I
R
I
DI
I
F
= -10µA
I
DI
= 10µA
V
F
= -20V
V
DI
= 20V
V
DI
= 20V, I
FA
= 1mA
∆V
F
/∆T
tRR
C
D
C
DAI
C
DCI
|I
FC
/I
FA
|
I
F
= 1mA
I
F
= 2mA, I
R
= 2mA
Typical Performance Curves
1
DC FORWARD VOLTAGE DROP (V)
DC FORWARD VOLTAGE DROP (V)
T
A
= 25
o
C
0.8
1.2
1
0.6
0.8
0.6
I
F
= 10mA
I
F
= 3mA
I
F
= 1mA
I
F
= 300µA
I
F
= 100µA
I
F
= 10µA
I
F
= 1µA
I
F
= 100nA
0.4
0.4
0.2
0.2
0
0.1
1
10
10
2
10
3
10
4
FORWARD CURRENT (µA)
0
-100
-50
0
50
100
TEMPERATURE (
o
C)
150
FIGURE 1. DC FORWARD VOLTAGE DROP vs FORWARD
CURRENT
FIGURE 2. DC FORWARD VOLTAGE DROP vs
TEMPERATURE
2
CA3141
Typical Performance Curves
3
DIODE OFFSET VOLTAGE (mV)
2.5
2
1.5
T
A
= 25
o
C
|V
F1
- V
F2
| , |V
F3
- V
F4
| , |V
F5
- V
F6
|
|V
F7
- V
F8
| , |V
F9
- V
F10
|
(Continued)
1.2
T
A
= 25
o
C
1
DIODE CAPACITANCE (pF)
0.8
0.6
D
5
, D
9
D
2
D
7
, D
8
D
4
D
1
, D
6
D
3
, D
10
1
0.5
0.4
0.2
0
1
10
2
10
3
10
4
MAGNITUDE OF ANODE CURRENT (µA)
10
10
5
0
0
5
10
15
20
CATHODE-TO-ANODE DC REVERSE VOLTAGE (V)
FIGURE 3. 3. DIODE OFFSET VOLTAGE vs MAGNITUDE OF
ANODE CURRENT
FIGURE 4. DIODE CAPACITANCE vs CATHODE-TO-ANODE
REVERSE VOLTAGE
1.6
DIODE ANODE-TO-SUBSTRATE
CAPACITANCE (pF)
1.5
1.4
1.3
1.2
1.1
T
A
= 25
o
C
DIODE CATHODE-TO-SUBSTRATE
CAPACITANCE (pF)
12
T
A
= 25
o
C
10
8
6
CATHODE (TERMINALS 3, 6, 14)
ANODE (TERMINALS 2, 8, 11, 16)
ANODE (TERMINAL 1)
1
0.9
0.8
0.7
0.6
0.5
0
ANODE (TERMINALS 4, 5)
1 2 3 4 5 6
7
8 9 10
ANODE-TO-SUBSTRATE DC REVERSE VOLTAGE (V)
ANODE (TERMINAL 15)
4
2
CATHODE (TERMINALS 7, 10, 12, 13)
0
0
5
10
15
20
CATHODE-TO-SUBSTRATE DC REVERSE VOLTAGE (V)
FIGURE 5. DIODE ANODE-TO-SUBSTRATE CAPACITANCE vs
REVERSE VOLTAGE
FIGURE 6. DIODE CATHODE-TO-SUBSTRATE CAPACITANCE vs
CATHODE-TO-SUBSTRATE DC REVERSE VOLTAGE
T
A
= 25
o
C
FORWARD (CATHODE) CURRENT (mA)
10
DC LEAKAGE CURRENT (pA)
V
DI
= 10V
10
5
10
4
10
3
10
2
10
DIODE REVERSE
(LEAKAGE) CURRENT
1
0.1
DIODE-TO-SUBSTRATE
LEAKAGE CURRENT
1
0.1
0.01
0.01
10
1
FORWARD (ANODE) CURRENT (mA)
0.1
-100
-50
0
50
100
150
TEMPERATURE (
o
C)
FIGURE 7. FORWARD (CATHODE) CURRENT vs FORWARD
(ANODE) CURRENT
FIGURE 8. DC LEAKAGE CURRENT vs TEMPERATURE
3
CA3141
Dual-In-Line Plastic Packages (PDIP)
N
E1
INDEX
AREA
1 2 3
N/2
E16.3
(JEDEC MS-001-BB ISSUE D)
16 LEAD DUAL-IN-LINE PLASTIC PACKAGE
INCHES
SYMBOL
-B-
MILLIMETERS
MIN
-
0.39
2.93
0.356
1.15
0.204
18.66
0.13
7.62
6.10
MAX
5.33
-
4.95
0.558
1.77
0.355
19.68
-
8.25
7.11
NOTES
4
4
-
-
8, 10
-
5
5
6
5
-
6
7
4
9
Rev. 0 12/93
MIN
-
0.015
0.115
0.014
0.045
0.008
0.735
0.005
0.300
0.240
MAX
0.210
-
0.195
0.022
0.070
0.014
0.775
-
0.325
0.280
A
E
A2
L
A
C
L
-A-
D
BASE
PLANE
SEATING
PLANE
D1
B1
B
0.010 (0.25) M
D1
A1
A1
A2
-C-
B
B1
C
D
D1
E
E1
e
e
A
e
B
L
N
e
A
e
C
C
e
C A B S
e
B
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between
English and Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated
in JEDEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protru-
sions. Mold flash or protrusions shall not exceed 0.010 inch
(0.25mm).
6. E and e
A
are measured with the leads constrained to be per-
pendicular to datum -C- .
7. e
B
and e
C
are measured at the lead tips with the leads uncon-
strained. e
C
must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions.
Dambar protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3,
E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
