CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid
undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable
bypass capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
T
A
= 25
o
C, For Equipment Design
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)ClO
V
(BR)EBO
I
CBO
I
CEO
h
FE
TEST CONDITIONS
l
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 10µA, I
CI
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 10V, I
E
= 0,
V
CE
= 10V, I
B
= 0,
V
CE
= 3V, I
C
= 1mA
MIN
20
15
20
5
-
-
40
TYP
60
24
60
7
0.002
(Figure 2)
100
MAX
-
-
-
-
100
5
-
UNITS
V
V
V
V
nA
µA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff Current (Figure 1)
Collector-Cutoff Current (Figure 2)
DC Forward-Current Transfer Ratio (Figure 3)
Electrical Specifications
PARAMETER
T
A
= 25
o
C, Typical Values Intended Only for Design Guidance
SYMBOL
h
FE
V
CE
= 3V
TEST CONDITIONS
I
C
= 10mA
I
C
= 10µA
V
BE
V
CE
= 3V
I
E
= 1 mA
I
E
= 10mA
TYPICAL
VALUES
100
54
0.715
0.800
-1.9
0.23
3.25
V
V
mV/
o
C
V
dB
UNITS
DC Forward-Current Transfer Ratio
(Figure 3)
Base-to-Emitter Voltage (Figure 4)
V
BE
Temperature Coefficient (Figure 5)
Collector-to-Emitter
Saturation Voltage
Noise Figure (Low Frequency)
∆V
BE
/∆T
V
CE SAT
NF
V
CE
= 3V, l
C
= 1 mA
I
B
= 1mA, I
C
= 10mA
f = 1kHz, V
CE
= 3V, I
C
= 100µA,
R
S
= 1kΩ
2
CA3086
Electrical Specifications
PARAMETER
Low-Frequency, Small-Signal Equivalent-
Circuit Characteristics:
Forward Current-Transfer Ratio
(Figure 6)
Short-Circuit Input Impedance
(Figure 6)
Open-Circuit Output Impedance
(Figure 6)
Open-Circuit Reverse-Voltage
Transfer Ratio (Figure 6)
Admittance Characteristics:
Forward Transfer Admittance
(Figure 7)
Input Admittance (Figure 8)
Output Admittance (Figure 9)
Reverse Transfer Admittance
(Figure 10)
Gain-Bandwidth Product (Figure 11)
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
y
FE
y
IE
y
OE
y
RE
f
T
C
EBO
C
CBO
C
ClO
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
C l
= 3V, I
C
= 0
h
FE
h
IE
h
OE
h
RE
f = 1MHz,V
CE
= 3V, l
C
= 1mA
31 - j1.5
0.3 + j0.04
0.001 + j0.03
See Figure 10
550
0.6
0.58
2.8
mS
mS
mS
-
MHz
pF
pF
pF
T
A
= 25
o
C, Typical Values Intended Only for Design Guidance
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