Double Differential Magneto Resistor
FP 410 L (4
x
80) FM
Dimensions in mm
Features
• Double differential magneto resistor
on same carrier
• Accurate intercenter spacing
• High operating temperature range
• High output voltage
• Compact construction
• Available in strip form for automatic
assembly
Type
FP 410 L (4×80) FM
FP 410 L (4×80) FM
Semiconductor Group
1
Typical applications
•
•
•
•
Incremental angular encoders
Detection of sense of rotation
Detection of speed
Detection of position
Ordering Code
Q65410-L80E (taped)
Q65110-L80F (singular)
07.96
FP 410 L (4
x
80) FM
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as Micropack.
The basic resistance of each of the magnetic resistors is 80
Ω.
The two series coupled
pairs of magnetic resistors are actuated by an external magnetic field or can be biased
by a permanent magnet and actuated by a soft iron target.
Semiconductor Group
2
FP 410 L (4
x
80) FM
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
(
B
= 0.3 T)
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (
T
A
= 25
°C)
Basic resistance
(
I
≤
1 mA;
B
= 0 T)
Center symmetry
3)
Relative resistance change
(
R
=
R
01-3
,
R
04-6
at
B
= 0 T)
B
=
±
0.3 T
4)
B
=
±
1T
Temperature coefficient
B
=0T
B
=
±
0.3 T
B
=
±
1T
Symbol
Value
– 40 / + 175
– 40 / + 185
1000
8
≥
20
2
Unit
°C
°C
mW
V
mW/K
T
A
T
stg
P
tot
V
IN
G
th case
G
th A
R
01-3
R
04-6
M
R
B
/
R
0
110…220
≤
6
> 1.7
>7
Ω
%
–
TC
R
– 0.16
– 0.38
– 0.54
%/K
%/K
%/K
1) Corresponding to diagram
P
tot
=
f
(
T
case
)
2) Corresponding to diagram
V
IN
=
f
(
T
case
)
3)
M
R
01
–
2
–
R
02
–
= -------------------------------
3
×
100% for
R
01-2
>
R
02-3
-
R
01
–
2
M
–
R
05
–
6
= -------------------------------
×
100% for
R
04-5
>
R
05-6
-
R
04
–
5
R
04
–
5
4) 1 T = 1 Tesla = 10
4
Gauss
Semiconductor Group
3
FP 410 L (4
x
80) FM
Max. power dissipation versus
temperature
P
tot
=
f
(
T
),
T
=
T
case
,
T
A
Maximum supply voltage
versus temperature
V
IN 1-3, 4-6
=
f
(
T
),
B
= 0.3 T
Typical MR resistance
versus temperature
R
01-3, 4-6
=
f
(
T
A
),
B
= Parameter
Typical MR resistance
versus magnetic induction
B
R
01-3, 4-6
=
f
(
B
),
T
A
= 25
°C
Semiconductor Group
4
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