BSS 119
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
•
V
GS(th)
= 1.6 ...2.6 V
Pin 1
G
Pin 2
S
Pin 3
D
Type
BSS 119
Type
BSS 119
V
DS
100 V
I
D
0.17 A
R
DS(on)
6
Ω
Package
SOT-23
Marking
sSH
Ordering Code
Q67000-S007
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
100
100
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
±
14
±
20
A
0.17
T
A
= 28 °C
DC drain current, pulsed
I
Dpuls
0.68
T
A
= 25 °C
Power dissipation
P
tot
0.36
W
T
A
= 25 °C
Semiconductor Group
1
Sep-13-1996
BSS 119
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium
15 mm x 16.7 mm x 0.7 mm
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
350
≤
285
E
55 / 150 / 56
Unit
°C
K/W
T
j
T
stg
R
thJA
Therminal resistance, chip-substrate- reverse side
1)
R
thJSR
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
100
-
2
-
2.6
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
1.6
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
0.1
2
10
4
6
1
60
µA
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 25 °C
Gate-source leakage current
I
GSS
-
100
nA
Ω
-
-
6
10
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= 10 V,
I
D
= 0.17 A
V
GS
= 4.5 V,
I
D
= 0.17 A
Semiconductor Group
2
Sep-13-1996
BSS 119
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.1
0.2
70
10
4
-
S
pF
-
95
15
6
ns
-
4
6
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.17 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Rise time
t
r
-
5
8
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
12
16
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Fall time
t
f
-
12
16
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Semiconductor Group
3
Sep-13-1996
BSS 119
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.85
0.17
0.68
V
-
1.3
Values
typ.
max.
Unit
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.34 A,
T
j
= 25 °C
Semiconductor Group
4
Sep-13-1996
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