BS 107
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1
S
Type
BS 107
Type
BS 107
Pin 2
G
Marking
BS 107
Pin 3
D
V
DS
200 V
I
D
0.13 A
R
DS(on)
26
Ω
Package
TO-92
Ordering Code
Q67000-S078
Tape and Reel Information
E6288
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
200
200
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
0.13
T
A
= 31 °C
DC drain current, pulsed
I
Dpuls
0.52
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997
BS 107
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
125
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
200
-
1.5
0.1
2
-
-
1
14
14.5
-
2
1
60
30
1
10
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
0.8
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
-
-
µA
nA
µA
nA
-
Ω
-
-
26
28
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= 130 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 70 V,
V
GS
= 0.2 V,
T
j
= 25 °C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 0.12 A
V
GS
= 2.8 V,
I
D
= 0.02 A
Semiconductor Group
2
12/05/1997
BS 107
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.06
0.17
60
8
3.5
-
S
pF
-
80
12
5
ns
-
5
8
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.12 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
Rise time
t
r
-
8
12
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
Turn-off delay time
t
d(off)
-
12
16
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
Fall time
t
f
-
15
20
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.24 A
R
G
= 50
Ω
Semiconductor Group
3
12/05/1997
BS 107
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
typ.
max.
Unit
A
-
-
-
-
0.9
0.13
0.52
V
-
1.2
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.5 A
Semiconductor Group
4
12/05/1997
BS 107
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
4 V
0.14
A
0.12
1.2
W
1.0
P
tot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
D
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.2
0.1
0.0
0
20
40
60
80
100
120
°C
160
0.02
0.01
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
240
V
230
V
(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
12/05/1997
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