BSP 298
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
•
V
GS(th)
= 2.1 ... 4.0 V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP 298
Type
BSP 298
V
DS
400 V
I
D
0.5 A
R
DS(on)
3
Ω
Package
SOT-223
Marking
BSP 298
Ordering Code
Q67000-S200
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
0.5
Unit
A
I
D
I
Dpuls
2
T
A
= 26 °C
DC drain current, pulsed
T
A
= 25 °C
Avalanche energy, single pulse
E
AS
130
mJ
I
D
= 1.35 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 125 mH,
T
j
= 25 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
1.8
V
W
T
A
= 25 °C
Semiconductor Group
1
Sep-12-1996
BSP 298
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
70
≤
10
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
R
thJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
400
-
3
0.1
10
10
2.2
-
4
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 0 °C
Gate threshold voltage
V
GS(th)
2.1
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
1
100
µA
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
-
100
nA
Ω
-
3
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= 10 V,
I
D
= 0.5 A
Semiconductor Group
2
Sep-12-1996
BSP 298
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.5
1.2
300
50
20
-
S
pF
-
400
75
30
ns
-
10
15
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.5 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
Rise time
t
r
-
25
40
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
30
40
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
Fall time
t
f
-
20
30
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.3 A
R
GS
= 50
Ω
Semiconductor Group
3
Sep-12-1996
BSP 298
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.95
300
2.5
0.5
2
V
-
1.2
ns
-
-
µC
-
-
Values
typ.
max.
Unit
I
SM
V
SD
t
rr
Q
rr
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 1 A,
T
j
= 25 °C
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Semiconductor Group
4
Sep-12-1996
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