BSS 125
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
•
V
GS(th)
= 1.5 ...2.5 V
Pin 1
G
Type
BSS 125
Type
BSS 125
BSS 125
BSS 125
Pin 2
D
Marking
SS125
Pin 3
S
V
DS
600 V
I
D
0.1 A
R
DS(on)
45
Ω
Package
TO-92
Ordering Code
Q62702-S021
Q67000-S008
Q67000-S233
Tape and Reel Information
E6288
E6296
E6325
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
600
600
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
0.1
T
A
= 35 °C
DC drain current, pulsed
I
Dpuls
0.4
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997
BSS 125
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
125
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
600
-
2
10
8
10
30
-
2.5
100
50
100
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
1.5
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
nA
µA
nA
-
Ω
-
45
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 0.1 A
Semiconductor Group
2
12/05/1997
BSS 125
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.06
0.17
95
9
4
-
S
pF
-
130
14
6
ns
-
5
8
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.1 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Rise time
t
r
-
10
15
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Turn-off delay time
t
d(off)
-
16
21
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Fall time
t
f
-
15
20
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Semiconductor Group
3
12/05/1997
BSS 125
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
typ.
max.
Unit
A
-
-
-
-
0.8
0.1
0.4
V
-
1.3
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.2 A
Semiconductor Group
4
12/05/1997
BSS 125
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
0.11
A
1.2
W
1.0
P
tot
0.9
0.8
I
D
0.09
0.08
0.07
0.7
0.06
0.6
0.05
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
°C
160
0.04
0.03
0.02
0.01
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
710
V
680
V
(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
12/05/1997
微控制器 MCU
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