BSS 87
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSS 87
Type
BSS 87
V
DS
240 V
I
D
0.29 A
R
DS(on)
6
Ω
Package
SOT-89
Marking
KA
Ordering Code
Q67000-S506
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
240
240
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
±
14
±
20
A
0.29
T
A
= 23 °C
DC drain current, pulsed
I
Dpuls
1.16
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
Sep-18-1996
BSS 87
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
125
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
240
-
1.5
0.1
10
-
1
3
4
-
2
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
0.8
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
-
1
100
0.2
µA
V
DS
= 240 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 240 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 25 °C
Gate-source leakage current
I
GSS
-
10
nA
Ω
-
-
6
10
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= 10 V,
I
D
= 0.29 A
V
GS
= 4.5 V,
I
D
= 0.29 A
Semiconductor Group
2
Sep-18-1996
BSS 87
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.14
0.33
115
15
8
-
S
pF
-
155
25
12
ns
-
6
9
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.29 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Rise time
t
r
-
10
15
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
33
45
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Fall time
t
f
-
22
30
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
GS
= 50
Ω
Semiconductor Group
3
Sep-18-1996
BSS 87
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.85
0.29
1.16
V
-
1.4
Values
typ.
max.
Unit
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.58 A,
T
j
= 25 °C
Semiconductor Group
4
Sep-18-1996
BSS 87
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
0.30
A
0.26
1.2
W
1.0
P
tot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
°C
160
I
D
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
285
V
275
V
(BR)DSS
270
265
260
255
250
245
240
235
230
225
220
215
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
Sep-18-1996
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