SP8M9
Transistors
Switching
SP8M9
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3
3.9±0.15
Max.1.75
1.5±0.1
0.15
Application
Power switching, DC / DC converter.
1.27
0.4±0.1
0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
MOUNTED ON A CERAMIC BOARD.
Equivalent circuit
Limits
Nchannel
Pchannel
30
−30
20
−20
±9.0
±5.0
±36
±20
1.6
−1.6
36
−20
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Continuous
Pulsed
Continuous
Pulsed
∗1
∗1
∗2
∗2
∗2
0.5±0.1
(1)
(4)
0.2±0.1
(1) (2) (3) (4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
(Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED
ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C
/ W
∗
1/5
SP8M9
Transistors
N-ch
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
−
30
−
1.0
−
−
−
7.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
12
16
17
−
1190
340
190
10
15
55
22
15
3.0
6.1
Max.
10
−
1
2.5
18
24
25
−
−
−
−
−
−
−
−
21
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=9.0A,
V
GS
=10V
I
D
=9.0A,
V
GS
=4.5V
I
D
=9.0A,
V
GS
=4V
I
D
=9.0A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=4.5A,
V
DD
15V
V
GS
=10V
R
L
=3.33Ω
R
G
=10Ω
V
DD
15V
V
GS
=5V
I
D
=9.0A
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Body diode characteristics (Source-Drain Characteristics)
(Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
=6.4A,
V
GS
=0V
∗
2/5
SP8M9
Transistors
P-ch
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
−
−30
−
−1.0
−
−
−
4.5
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
30
40
45
−
1400
300
230
15
30
80
40
16
3.5
6.5
Max.
−10
−
−1
−2.5
42
56
63
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
= −20V,
V
DS
=0V
I
D
= −1mA,
V
GS
=0V
V
DS
= −30V,
V
GS
=0V
V
DS
= −10V,
I
D
= −1mA
I
D
= −5.0A,
V
GS
= −10V
I
D
= −2.5A,
V
GS
= −4.5V
I
D
= −2.5A,
V
GS
= −4.0V
I
D
= −2.5A,
V
DS
= −10V
V
DS
= −10V
V
GS
=0V
f=1MHz
I
D
= −2.5A,
V
DD
−15V
V
GS
= −10V
R
L
=6Ω
R
G
=10Ω
V
DD
−15V
V
GS
= −5V
I
D
= −5.0A
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Body diode characteristics (Source-Drain Characteristics)
(Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
= −1.6A,
V
GS
=0V
∗
3/5
SP8M9
Transistors
N-ch
Electrical characteristic curves
10000
1000
t
f
1000
C
iss
GATE-SOURCE VOLTAGE : V
GS
(V)
SWITCHING TIME : t (ns)
Ta=25°C
f=1MHz
V
GS
=0V
10000
CAPACITANCE : C (pF)
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
10
Ta=25°C
9 V
DD
=15V
I
D
=9A
8
R
G
=10Ω
7 Pulsed
6
5
4
3
2
1
0
0
5
10
15
20
25
30
100
t
d (off)
C
oss
100
C
rss
10
t
r
t
d (on)
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
200
Ta=25°C
Pulsed
150
I
D
=9A
10
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1
SOURCE CURRENT : I
s
(A)
8
10
12
14
16
DRAIN CURRENT : I
D
(A)
1
0.1
100
I
D
=4.5A
0.1
0.01
50
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=10V
Pulsed
V
GS
=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
1000
1000
V
GS
=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
100
100
10
10
10
1
0.1
1
10
1
0.1
1
10
1
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
4/5
SP8M9
Transistors
P-ch
Electrical characteristic curves
10000
GATE-SOURCE VOLTAGE :
−V
GS
(V)
Ta=25°C
f=1MHz
V
GS
=0V
C
iss
10000
8
Ta=25°C
V
DD
= −15V
V
GS
= −10V
R
G
=10Ω
Pulsed
7
6
5
4
3
2
1
0
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
1000
Ta=25°C
V
DD
= −15V
I
D
= −5.0A
R
G
=10Ω
Pulsed
t
f
t
d (off)
100
100
C
oss
C
rss
t
d (on)
10
t
r
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0 1 2 3 4 5 6 7 8 9 1011121314151617181920
DRAIN-SOURCE VOLTAGE :
−V
DS
(V)
DRAIN CURRENT :
−I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
V
DS
= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
200
Ta=25°C
Pulsed
150
I
D
=−5.0A
I
D
=−2.5A
10
V
GS
=0V
Pulsed
1
SOURCE CURRENT :
−I
S
(A)
DRAIN CURRENT :
−I
D
(A)
1
0.1
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
0.1
0.01
50
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
12
14
16
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE :
−V
GS
(V)
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SOURCE-DRAIN VOLTAGE :
−V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
= −10V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
= −4.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
= −4V
Pulsed
100
100
100
10
10
10
1
0.1
1
10
1
0.1
1
10
1
0.1
1
10
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
5/5
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