BSP 171 P
Preliminary data
SIPMOS
®
Power Transistor
•
P-Channel
•
Enhancement mode
•
Avalanche rated
•
Logic Level
•
dv/dt rated
Pin 1
G
Type
BSP 171 P
V
DS
-60 V
I
D
R
DS(on)
Pin2/4
D
Pin 3
S
-1.8 A 0.3
Ω
Package
Ordering Code
@ V
GS
V
GS
= -10 V P-SOT223-4-1 Q67041-S4019
-
-
Maximum Ratings,
at
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
= 25 °C
T
A
= 100 °C
Pulsed drain current
T
A
= 25 °C
Avalanche energy, single pulse
I
D
= -1.8 A,
V
DD
= -25 V,
R
GS
= 25
Ω
Avalanche current,periodic limited by
T
jmax
Avalanche energy,periodic limited by
T
j(max)
Reverse diode dv/dt
I
S
= -1.8 A,
V
DD
≤
V
(BR)DSS
, di/dt = 100 A/µs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation,
T
A
= 25 °C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
T
stg
I
AR
E
AR
dv/dt
E
AS
I
D puls
I
D
Value
-1.8
-1.15
-7.2
70
-1.8
0.18
6
Unit
A
mJ
A
mJ
KV/µs
±
14
1.8
-55 ...+150
-55 ...+150
55/150/56
V
W
°C
Semiconductor Group
1
04 / 1998
BSP 171 P
Preliminary data
Electrical Characteristics
Parameter
at
T
j = 25 °C, unless otherwise specified
Thermal Characteristics
Thermal resistance,
junction -soldering point (Pin 4)
Thermal resistance, junction - ambient
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
F)
R
thJS
R
thJA
R
thJA
-
-
tbd
tbd
-
70
Symbol
min.
-
-
Values
typ.
tbd
-
max.
tbd
-
K/W
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -460 µA,
T
j
= 25 °C
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= -4.5 V,
I
D
= -1.5 A
V
GS
= -10 V,
I
D
= -1.8 A
R
DS(on)
-
-
0.3
0.21
0.45
0.3
Ω
I
GSS
V
GS(th)
I
DSS
-
-
-
-
-
-0.1
-
-10
-0.1
-1
-100
-100
nA
-1
-1.5
-2
µA
V
(BR)DSS
-60
-
-
V
Semiconductor Group
2
04 / 1998
BSP 171 P
Preliminary data
Electrical Characteristics
Parameter
at
T
j = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate charge at threshold
V
DD
= -24 V,
I
D
≥
-0,1 A,
V
GS
= 0 to - 1 V
Gate charge at
V
gs
=5V
V
DD
= -24 V,
I
D
= -1.8 A ,
V
GS
= 0 to -5 V
Gate charge total
V
DD
= -24 V,
I
D
= -1.8 A,
V
GS
= 0 to -10 V
Gate plateau voltage
V
DD
= -24 V,
I
D
= -1.8 A
V
(plateau)
-
2.8
-
V
Q
g(5)
Q
g
-
-
8
14
12
21
nC
Q
G(th)
Symbol
min.
-
Values
typ.
0.6
max.
0.9
nC
Unit
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 °C
Inverse diode direct current,pulsed
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -3.6 A
Reverse recovery time
V
R
= -30 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
t
rr
Q
rr
-
-
100
0.2
150
0.3
ns
µC
I
SM
V
SD
-
-
-
-0.95
-7.2
-1.2
V
I
S
-
-
-1.8
A
Semiconductor Group
4
04 / 1998
BSP 171 P
Preliminary data
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
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The information describes a type of component and shall not be considered as warranted characteristics.
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
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in question please contact your nearest Siemens Office, Semiconductor Group.
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1
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2
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1)A critical component is a component used in a life-support device or system whose failure can reasonably be
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Semiconductor Group
5
04 / 1998
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