BSS 169
Preliminary data
SIPMOS
®
Small-Signal Transistor
• N channel
• Depletion mode
• High dynamic resistance
Pin 1
G
Type
BSS 169
Pin 2
S
Pin 3
D
V
DS
100 V
I
D
0.12 A
R
DS(on)
12
Ω
Package
SOT-23
Ordering Code
Q67050-T7
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
100
100
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage, aperiodic
Continuous drain current
±
14
±
20
A
0.12
T
A
= 25 °C
DC drain current, pulsed
I
Dpuls
0.36
T
A
= 25 °C
Power dissipation
P
tot
0.36
W
-55 ... + 150 °C
-55 ... + 150
≤
350
≤
285
T
A
= 25 °C
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate - reverse side
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJA
R
thJSR
K/W
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
May-30-1996
BSS 169
Preliminary data
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSV
V
100
-
-2.5
-
-
200
10
6
-
-1.5
µA
-
-
1
-
mA
70
-
nA
-
100
Ω
-
12
V
GS
= -10 V,
I
D
= 250 µA
Gate threshold voltage
V
GS(th)
-3
V
DS
= 3 V,
I
D
= 10 µA
Drain-source cutoff current
I
DSV
V
DS
= 100 V,
V
GS
= -10 V,
T
j
= 25 °C
V
DS
= 100 V,
V
GS
= -10 V,
T
j
= 125 °C
On-state drain current
I
D(on)
I
GSS
R
DS(on)
V
GS
= 0 V,
V
DS
= 10 V
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
GS
= 0 V,
I
D
= 0.05 A
Semiconductor Group
2
May-30-1996
BSS 169
Preliminary data
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.1
0.15
70
11
4
-
S
pF
-
100
20
7
ns
-
7
11
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.12 A
Input capacitance
C
iss
C
oss
-
V
GS
= -4.5 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= -4.5 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= -4.5 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.27 A
R
GS
= 50
Ω
Rise time
t
r
-
10
15
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.27 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
13
17
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.27 A
R
GS
= 50
Ω
Fall time
t
f
-
13
17
V
DD
= 30 V,
V
GS
= -5... + 5 V,
I
D
= 0.27 A
R
GS
= 50
Ω
Semiconductor Group
3
May-30-1996
BSS 169
Preliminary data
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
0.8
0.12
0.36
V
-
1.3
Values
typ.
max.
Unit
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.3 A
Semiconductor Group
4
May-30-1996
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