BTS 4141N
Smart High-Side Power Switch
1 Channel: 1 x 200mΩ
Features
•
Short circuit protection
•
Current limitation
•
Overload protection
Product Summary
Overvoltage protection
Operating voltage
V
bb(AZ)
V
bb(on)
R
ON
SOT-223
4
47
200
V
mΩ
12...45 V
On-state resistance
•
Overvoltage protection (including load dump)
•
Undervoltage shutdown with auto-
restart and hysteresis
•
Switching inductive loads
•
Clamp of negative voltage at output
with inductive loads
•
CMOS compatible input
•
Thermal shutdown with restart
•
ESD - Protection
•
Loss of GND and loss of
V
bb
protection
•
Very low standby current
•
Reverse battery protection with external resistor
•
Improved electromagnetic compatibility (EMC)
3
2
1
VPS05163
Application
•
All types of resistive, inductive and capacitive loads
•
µC compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions.
Page 1
2004-01-27
BTS 4141N
Block Diagram
+ Vbb
Voltage
source
V
Logic
Voltage
sensor
R
in
4
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
OUT
Temperature
sensor
1
3
IN
ESD
Logic
Load
GND
miniPROFET
®
Load GND
2
Signal GND
Pin
1
2
3
4
Symbol
OUT
GND
IN
Vbb
Function
Output to the load
Logic ground
Input, activates the power switch in case of logic high signal
Positive power supply voltage
Page 2
2004-01-27
BTS 4141N
Maximum Ratings
Parameter
at
T
j
= 25°C,
unless otherwise specified
Supply voltage
Continuous input voltage
2)
Load current (Short - circuit current, see page 5)
Current through input pin (DC)
Reverse current through GND-pin
3)
Operating temperature
Storage temperature
Power dissipation
4)
Inductive load switch-off energy dissipation
4)5)
single pulse
T
j
= 125 °C,
I
L
= 0.5 A
Load dump protection
5)
V
LoadDump6)
=
V
A
+
V
S
R
I
=2Ω,
t
d
=400ms,
V
IN
= low or high,
V
A
=13,5V
R
L
= 47
Ω
Electrostatic discharge
voltage
(Human Body Model)
V
ESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
All other pins
±1
±5
83
kV
V
Loaddump
V
V
bb
V
IN
I
L
I
IN
-I
GND
T
j
T
stg
P
tot
E
AS
-0,3
1)
...48
-10...V
bb
self limited
±5
-0.5
internal limited
-55 ... +150
1.4
0.7
W
J
A
mA
A
°C
V
Symbol
Value
Unit
1defined by
P
tot
2At
V
> Vbb, the input current is not allowed to exceed ±5 mA.
IN
3defined by
P
tot
4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
5not subject to production test, specified by design
6
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than
V
bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
Page 3
2004-01-27
BTS 4141N
Electrical Characteristics
Parameter
at
T
j
= -40...125 °C,
V
bb
= 15...30 V unless otherwise specified
Thermal Characteristics
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
Thermal resistance, junction - soldering point
Load Switching Capabilities and Characteristics
On-state resistance
T
j
= 25 °C,
I
L
= 0.5 A
T
j
= 125 °C
Nominal load current
2)
Device on PCB
1)
Turn-on time
Turn-off time
Slew rate on
Slew rate off
to 90%
V
OUT
to 10%
V
OUT
10 to 30% V
OUT
,
70 to 40% V
OUT
,
t
on
-
t
off
-
dV/dt
on
-
-dV/dt
off
-
1
2
1
2
75
150
V/µs
50
100
µs
R
L
= 47
Ω,
V
IN
= 0 to 10 V
R
L
= 47
Ω,
V
IN
= 10 to 0 V
R
L
= 47
Ω,
V
bb
= 15 V
R
L
= 47
Ω,
V
bb
= 15 V
I
L(nom)
R
ON
-
-
0.7
150
270
-
200
320
-
A
mΩ
R
th(JA)
R
th(JA)
R
thJS
-
-
-
-
-
-
125
70
7
K/W
K/W
Symbol
min.
Values
typ.
max.
Unit
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
2Nominal load current is limited by the current limitation ( see page 5 )
Page 4
2004-01-27
BTS 4141N
Electrical Characteristics
Parameter
at
T
j
= -40...125 °C,
V
bb
= 15...30 V unless otherwise specified
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
Undervoltage hysteresis
∆V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Standby current
T
j
= -40...85 °C,
V
IN
≤
1,2 V
T
j
= 125 °C
1)
Operating current
Leakage output current (included in
I
bb(off)
)
V
IN
≤
1,2 V
Protection Functions
2)
Initial peak short circuit current limit
T
j
= -40 °C,
V
bb
= 20 V,
t
m
= 150 µs
T
j
= 25 °C
T
j
= 125 °C
Repetitive short circuit current limit
T
j
= T
jt
(see timing diagrams)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
,
I
bb
= 4 mA
Overvoltage protection
3)
I
bb
= 4 mA
Thermal overload trip temperature
4)
Thermal hysteresis
T
jt
∆T
jt
135
-
-
10
-
-
°C
K
I
L(SCr)
V
ON(CL)
V
bb(AZ)
I
L(SCp)
-
-
0.7
-
62
47
-
1.4
-
1.1
68
-
2.1
-
-
-
-
-
V
A
I
GND
I
L(off)
I
bb(off)
-
-
-
-
10
-
1
3.5
25
50
1.6
10
mA
µA
µA
V
bb(on)
V
bb(under)
V
bb(u rst)
∆V
bb(under)
12
7
-
-
-
-
-
0.5
45
10.5
11
-
V
Symbol
min.
Values
typ.
max.
Unit
1higher current due temperature sensor
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
3see also V
ON(CL) in circuit diagram
4 higher operating temperature at normal function available
Page 5
2004-01-27
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