BTS730
PWM Power Unit
The device allows continuous power control for lamps,LEDs
or inductive loads.
!
Highside switch (Bootstrap)
!
Overtemperatur protection
!
Short circuit / overload protection through pulse width
reduction and overload shutdown
!
Load dump protection
!
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
!
Reverse battery protection
1)
!
Timing frequency adjustable
!
Controlled switching rise and fall times
!
Maximum current internally limited
!
Protection against loss of GND
2)
!
Electrostatic discharge (ESD) protection
!
Package: P-DSO-20-6 (SMD)
Note:
Switching frequency is programmed with an external capacitor
Type
Ordering Code
Marking
Package
BTS730
Maximum Ratings
Q67060-S7007-A2
-
P-DSO-20-6
Parameter
Active overvoltage prodection
Short circuit current
Input current (DC)
Pin1 (C
t
) and pin19 (V
C
)
Operating temperature range
Storage temperature range
Power dissipation
3)
Symbol
V
bb (AZ)
I
SC
I
Ct
I
VC
T
j
T
stg
P
tot
R
th JC
R
th JA
V
ESD
Values
>40
self-limited
2
2
-40...+150
-50...+150
3
2
≤
35
≤
75
≤1
Unit
V
-
mA
mA
°C
W
W
K/W
kV
T
a
=25°C
T
a
=85°C
Thermal resistance chip-case
3)
chip-ambient
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. MIL-STD883D, method 3015.7 and ESD assn.
std. S5.1-1993; R=1.5KΩ; C=100pF
1)
2)
3)
With 150Ω resistor in signal GND connection.
Potential between signal GND and load GND >0.5V
Device on 50mm
*
50mm
*
1.5mm epoxy PCB FR4 with 6 cm
2
(one layer,70µm thick) copper area for V
bb
conection,
PCB is vertical without air blowing.
Semiconductor Group
1
2003-Oct-01
BTS730
Electrical Characteristics
at
T
C
= 25 °C, V
bb
= 12 V, unless otherwise specified. C
Bootstrap
= 22nF
Parameter
On-state resistance
I
L
=3A,
V
bb
=12V
Operating voltage
T
C
= -40 ...+150°C
Nominal current, calculated value
ISO-standard:V
bb
-V
OUT
≤
0.5V, T
C
= 85°C
Load current limit
V
bb
-V
OUT
> 1V, T
C
= -40 ...+150°C
Undervoltage shutdown
I
L
= 3A, T
C
= -40 ...+150°C
Overvoltage shutdown
I
L
= 3A, T
C
= -40 ...+150°C
Max.output voltage (RMS)
I
L
= 3A,
V
bb
> 12 V
T
C
= -40 ...+150°C
Reference voltage
I
REF
= 10mA, T
C
= -40 ...+150°C
Reference current
pin 18 (GND) to pin 20 (V
REF
) short
Internal current consumption during
operation, measured in PWM gap
T
C
= -40 ...+150°C
Bootstrap voltage, pin 2 (
B1
) to pin 3 (C
B2
)
C
V
bb
= 12 V, T
C
= -40 ...+150°C
PWM frequency
T
c
= -40 ... +150 °C,
C
t
= 68 nF
Max. pulse duty factor
I
L
= 3A,
I
L
= 3A,
V
C
=0V , (50%
V
OUT
)
D
imin
du/dt
(on)
du/dt
(off)
T
j
3
20
20
150
-
-
-
8
14 %
120 mV/µs
120 mV/µs
-
°C
V
C
=0V , (50%
V
OUT
)
Min. pulse duty factor
Slew rate "on"
10 ... 90%
I
OUT
Slew rate "off"
90 ... 10%
I
OUT
Thermal overload trip temperature
1)
2)
Symbol
min.
R
ON
V
bb
I
L
-ISO
I
LLim
V
bb(LOW)
V
bb(HI)
V
RMSmax
-
3
17
12
-
5.9
1)
Values
typ.
-
-
-
20
4.2
18
-
max.
Unit
70 mΩ
16.9
2)
V
3
-A
-A
5.4 V
19 V
14 V
V
REF
I
REF
I
R
-
-
2
150
-
3V
mA
5 mA
V
B
f
PWM
D
imax
-
50
95
-
10
-
V
100 Hz
98
-
%
Note:
undervoltage shutdown
Note:
overvoltage shutdown
Semiconductor Group
3
2003-Oct-01
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